Sfoglia per Autore BALDERESCHI, ALFONSO
Atomic-scale structure of alkali halide solid solutions
1987-01-01 Peressi, Maria; Baldereschi, Alfonso
Valence-Band Offset at Lattice- Matched Heterojunctions
1989-01-01 Peressi, Maria; S., Baroni; Baldereschi, Alfonso; Resta, Raffaele
Can We Tune the Band Offset at Semiconductor Heterojunctions?
1989-01-01 S., Baroni; Resta, Raffaele; Baldereschi, Alfonso; Peressi, Maria
Electronic structure of InP/Ga0.47In0.53As interfaces
1990-01-01 Peressi, Maria; Baroni, S.; Baldereschi, Alfonso; Resta, Raffaele
Tuning band offsets at semiconductor interfaces by intralayer deposition
1991-01-01 Peressi, Maria; Baroni, S.; Resta, Raffaele; Baldereschi, Alfonso
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures
1992-01-01 G., Biasiol; L., Sorba; G., Bratina; R., Nicolini; Franciosi, Alfonso; Peressi, Maria; S., Baroni; Resta, Raffaele; Baldereschi, Alfonso
Engineering of Semiconductor Heterostructures by Ultrathin Control Layers
1993-01-01 Baldereschi, A.; Resta, R.; Peressi, M.; Baroni, S.; Mäder, K.
Band offsets engineering at semiconductor heterojunctions
1993-01-01 Peressi, M.; Colombo, L.; Baldereschi, A.; Resta, R.; Baroni, S.
Structural and electronic properties of strained Si/GaAs heterostructures
1993-01-01 Peressi, Maria; L., Colombo; Resta, Raffaele; S., Baroni; Baldereschi, Alfonso
Local interface composition and band discontinuities in heterovalent heterostructures
1994-01-01 R., Nicolini; L., Vanzetti; Guido, Mula; G., Bratina; L., Sorba; Franciosi, Alfonso; Peressi, Maria; S., Baroni; Resta, Raffaele; Baldereschi, Alfonso; J., Angelo; W., Gerberich
Role of structural and chemical contributions to valence-band offsets at strained-layer heterojunctions: The GaAs/GaP (001) case
1996-01-01 M., Di Ventra; Peressi, Maria; Baldereschi, Alfonso
Valence-band offset at the Si/GaP (110) interface
1996-01-01 M. E., Lazzouni; Peressi, Maria; Baldereschi, Alfonso
Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions
1996-01-01 M., Di Ventra; Peressi, Maria; Baldereschi, Alfonso
Adsorption geometry of benzene on Pd(110): Results of first-principles calculations
2000-01-01 Favot, F.; DAL CORSO, A.; Baldereschi, Alfonso
Structural models of amorphous carbon and its surfaces by tight-binding molecular dynamics
2000-01-01 Haerle, R; Baldereschi, Alfonso; Galli, G.
Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure
2000-01-01 Fall, Cj; Binggeli, N; Baldereschi, Alfonso
Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts
2000-01-01 Bardi, J; Binggeli, N; Baldereschi, Alfonso
CO adsorbed on Cu(001): A comparison between local density approximation and Perdew, Burke, and Ernezerhof generalized gradient approximation
2001-01-01 Favot, F.; DAL CORSO, A.; Baldereschi, Alfonso
Supramolecular self-assembly and selective step decoration on the Au(111) surface
2001-01-01 Vladimirova, M; Stengel, M; DE VITA, Alessandro; Baldereschi, Alfonso; Bohringer, M; Morgenstern, K; Berndt, R; Schneider, Wd
First-principle study of C 1s core-level shifts in amorphous carbon
2001-01-01 Haerle, R; Pasquarello, A; Baldereschi, Alfonso
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