Sfoglia per Autore
Atomic-scale structure of alkali halide solid solutions
1987-01-01 Peressi, Maria; Baldereschi, Alfonso
Valence-Band Offset at Lattice- Matched Heterojunctions
1989-01-01 Peressi, Maria; S., Baroni; Baldereschi, Alfonso; Resta, Raffaele
Can We Tune the Band Offset at Semiconductor Heterojunctions?
1989-01-01 S., Baroni; Resta, Raffaele; Baldereschi, Alfonso; Peressi, Maria
Electronic structure of InP/Ga0.47In0.53As interfaces
1990-01-01 Peressi, Maria; Baroni, S.; Baldereschi, Alfonso; Resta, Raffaele
Tuning band offsets at semiconductor interfaces by intralayer deposition
1991-01-01 Peressi, Maria; Baroni, S.; Resta, Raffaele; Baldereschi, Alfonso
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures
1992-01-01 G., Biasiol; L., Sorba; G., Bratina; R., Nicolini; Franciosi, Alfonso; Peressi, Maria; S., Baroni; Resta, Raffaele; Baldereschi, Alfonso
Structural and electronic properties of strained Si/GaAs heterostructures
1993-01-01 Peressi, Maria; L., Colombo; Resta, Raffaele; S., Baroni; Baldereschi, Alfonso
Engineering of Semiconductor Heterostructures by Ultrathin Control Layers
1993-01-01 Baldereschi, A.; Resta, R.; Peressi, M.; Baroni, S.; Mäder, K.
Ab initio calculation of the band offset at strained GaAs/InAs (001) heterojunctions
1993-01-01 Nacir, Tit; Peressi, Maria; Stefano, Baroni
Band offsets engineering at semiconductor heterojunctions
1993-01-01 Peressi, M.; Colombo, L.; Baldereschi, A.; Resta, R.; Baroni, S.
Atomic--scale Structure of Ionic and Semiconducting Solid Solutions
1993-01-01 A., Baldereschi; Peressi, Maria
Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001)
1994-01-01 G., Bratina; L., Vanzetti; L., Sorba; G., Biasiol; Franciosi, Alfonso; Peressi, Maria; S., Baroni
Local interface composition and band discontinuities in heterovalent heterostructures
1994-01-01 R., Nicolini; L., Vanzetti; Guido, Mula; G., Bratina; L., Sorba; Franciosi, Alfonso; Peressi, Maria; S., Baroni; Resta, Raffaele; Baldereschi, Alfonso; J., Angelo; W., Gerberich
Bulk and Interfacial Strain in Si/Ge heterostructures
1994-01-01 Peressi, Maria; S., Baroni
Role of the InAs monomolecular plane inserted in bulk GaAs
1995-01-01 Nacir, Tit; Peressi, Maria
Electronic structure of GaAs with an InAs (001) monolayer
1995-01-01 N., Tit; Peressi, Maria
Valence-band offset at the Si/GaP (110) interface
1996-01-01 M. E., Lazzouni; Peressi, Maria; Baldereschi, Alfonso
Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions
1996-01-01 M., Di Ventra; Peressi, Maria; Baldereschi, Alfonso
Ab-initio electronic structure calculation of the InAs multiple quantum wells in bulk GaAs
1996-01-01 Nacir, Tit; Peressi, Maria
InAs/GaSb(001) valence-band offset: Independence of interface composition and strain
1996-01-01 Barbara, Montanari; Peressi, Maria; Stefano, Baroni; Elisa, Molinari
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