Sfoglia per Autore
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures
1992-01-01 G., Biasiol; L., Sorba; G., Bratina; R., Nicolini; Franciosi, Alfonso; Peressi, Maria; S., Baroni; Resta, Raffaele; Baldereschi, Alfonso
Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001)
1994-01-01 G., Bratina; L., Vanzetti; L., Sorba; G., Biasiol; Franciosi, Alfonso; Peressi, Maria; S., Baroni
Local interface composition and band discontinuities in heterovalent heterostructures
1994-01-01 R., Nicolini; L., Vanzetti; Guido, Mula; G., Bratina; L., Sorba; Franciosi, Alfonso; Peressi, Maria; S., Baroni; Resta, Raffaele; Baldereschi, Alfonso; J., Angelo; W., Gerberich
Heterojunction band offset engineering
1996-01-01 Franciosi, Alfonso; VAN DE WALLE, C. G.
Evidence for a Dominant Midgap Trap in n-ZnSe Grown by Molecular Beam Epitaxy
1999-01-01 Hierro, A.; Kwon, D.; Goss, S. H.; Brillson, L. J.; Ringel, S. A.; Rubini, S.; Pelucchi, E.; Franciosi, Alfonso
Cavity Size and Temperature Dependence of Stimulated Emission in Single Zn1-xCdxSe/ZnSe Quantum-well Lasers
1999-01-01 Calcagnile, L. .; Lomascolo, M.; Cingolani, R.; Sorba, L.; Franciosi, Alfonso
CdTe Epitaxial Layers in ZnSe-based Heterostructures
1999-01-01 Rubini, S.; Bonanni, B.; Pelucchi, E.; Franciosi, Alfonso; Zhuang, Y.; Bauer, G.
Resonant Second Harmonic Generation in ZnSe Bulk Microcavity
1999-01-01 Pellegrini, V.; Colombelli, R.; Carusotto, I.; Beltram, F.; Rubini, S.; Lantier, R.; Franciosi, Alfonso; Vinegoni, C.; Pavesi, L.
Lateral Inhomogeneities in Engineered Schottky Barriers
1999-01-01 Heun, S.; Schmidt, T.; Slezak, J.; Diaz, J.; Prince, K. C.; Mueller, B.; Franciosi, Alfonso
Ohmic Versus Rectifying Contacts through Interfacial Dipoles: Al/InxGa1-xAs
1999-01-01 Marinelli, C.; Sorba, L.; Mller, B. H.; Kumar, D.; Orani, D.; Rubini, S.; Franciosi, Alfonso; DE FRANCESCHI, S.; Lazzarino, M.; Beltram, F.
Zn0.85Cd0.15Se Active Layers on Graded-composition InxGa1-xAs Buffer Layer
1999-01-01 Mueller, B. H.; Lantier, R.; Sorba, L.; Heun, S.; Rubini, S.; Lazzarino, M.; Franciosi, Alfonso; Napolitani, E.; Romanato, F.; Drigo, A.; Lazzarini, L.; Salviati, G.
Spatially Resolved Near-field Luminescence Spectroscopy of II-VI Quantum Wells: The Role of Localized Excitons
1999-01-01 Cingolani, R.; Bastard, G.; Labardi, M.; Fuso, F.; Allegrini, M.; Sorba, L.; Vanzetti, L.; Franciosi, Alfonso
Cathodoluminescence Spectroscopy of Deep Defect Levels at the ZnSe/GaAs Interface with Composition-control Interface Layer
1999-01-01 Schaefer, J.; Young, A. P.; Levin, T. M.; Brillson, L. J.; Paggel, J. J.; Vanzetti, L.; Franciosi, Alfonso
High Resolution Transmission Electron Microscopy to Study Very Thin Crystalline Layers Buried at an Amorphous-crystalline Interface
2000-01-01 Re, M.; Carlino, E.; Sorba, L.; Franciosi, Alfonso; B. H. MLLER B., H.
Andreev Reflection in Engineered Al/Si/InxGa1-xAs(001) Junctions
2000-01-01 DE FRANCESCHI, S.; Giazotto, F.; Beltram, F.; Sorba, L.; Lazzarino, M.; Franciosi, Alfonso
Photocapacitance Study of Bulk Deep Levels in ZnSe Grown by Molecular Beam Epitaxy
2000-01-01 Hierro, A.; Kwon, D.; Ringel, S. A.; Rubini, S.; Pelucchi, E.; Franciosi, Alfonso
Cathodoluminescence from InGaAs Layer Grown on GaAs Using a Transmission Electron Microscope
2000-01-01 Yamamoto, N; Mita, T; Heun, S; Franciosi, Alfonso; Bonard, J. M.
ZnSe/CdTe/ZnSe Heterostructures
2000-01-01 Rubini, S.; Bonanni, B.; Pelucchi, E.; Franciosi, Alfonso; Garulli, A.; Parisini, A.; Zhuang, Y.; Bauer, G.; Holy, V.
1.26 µm Intersubband Transitions in In0.3Ga0.7As/AlAs Quantum Wells
2000-01-01 C., PASCUAL GARCIA; A., DE NARDIS; V., Pellegrini; Jancu, J. M.; Beltram, F.; Mller, B. H.; Sorba, L.; Franciosi, Alfonso
Tunable Schottky Barrier Contacts to In1-xGaxAs
2000-01-01 Marinelli, C.; Sorba, L.; Lazzarino, M.; Kumar, D.; Pelucchi, E.; Mller, B. H.; Orani, D.; Rubini, S.; Franciosi, Alfonso; DE FRANCESCHI, S.; Beltram, F.
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