The electron effective mass, me, has been determined by magnetophotoluminescence in as-grown and hydrogenated Ga As1-x Nx samples for a wide range of nitrogen concentrations (from x<0.01% to x=1.78%). A modified kp model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental me values up to x≤0.6%. Experimental and theoretical evidence is provided for the N complexes responsible for the nonmonotonic and initially puzzling compositional dependence of the electron mass.

Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs(1-x)N(x)

FRANCIOSI, ALFONSO;
2006-01-01

Abstract

The electron effective mass, me, has been determined by magnetophotoluminescence in as-grown and hydrogenated Ga As1-x Nx samples for a wide range of nitrogen concentrations (from x<0.01% to x=1.78%). A modified kp model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental me values up to x≤0.6%. Experimental and theoretical evidence is provided for the N complexes responsible for the nonmonotonic and initially puzzling compositional dependence of the electron mass.
2006
http://prb.aps.org/abstract/PRB/v73/i7/e073201
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11368/1694158
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