Modern integrated circuits require insulating materials with a dielectric constant as low as possible in order to obtain device speed improvements through lower RC delay.We have investigated the electrical and structural properties of PTFE thin films obtained from Algoflons-PTFE nanoemulsions, via spin coating deposition, followed by sintering. Films as thin as 160nm with dielectric strength better than 4MV/cm have been obtained.Breakdown mechanism is also discussed.
“PTFE nanoemulsions as ultralow-k dielectric materials”
CARRATO, SERGIO;SCHMID, CHIARA;
2003-01-01
Abstract
Modern integrated circuits require insulating materials with a dielectric constant as low as possible in order to obtain device speed improvements through lower RC delay.We have investigated the electrical and structural properties of PTFE thin films obtained from Algoflons-PTFE nanoemulsions, via spin coating deposition, followed by sintering. Films as thin as 160nm with dielectric strength better than 4MV/cm have been obtained.Breakdown mechanism is also discussed.File in questo prodotto:
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