Early stages of thin Pb film growth on Ge(001) substrate, exhibiting quantum size effects (QSE), are characterized by means of Photoelectron Diffraction and Helium Atom Scattering. Pb is found to form a commensurate first monolayer, while an ordered layer-by-layer growth only sets in after deposition of 4 monolayers. In the intermediate coverage range no long range order of the overlayer is established and we find that uncorrelated islands of preferred four-layer thickness are formed. Continuous Pb film with long range order emerges through islands coalescence close to a coverage of 4 monolayers, upon which a more regular layer-by-layer growth mode sets in.

Characterization of early growth stages of Pb/Ge(001)

Cossaro, A.;MORGANTE, ALBERTO;CVETKO, DEAN
2014-01-01

Abstract

Early stages of thin Pb film growth on Ge(001) substrate, exhibiting quantum size effects (QSE), are characterized by means of Photoelectron Diffraction and Helium Atom Scattering. Pb is found to form a commensurate first monolayer, while an ordered layer-by-layer growth only sets in after deposition of 4 monolayers. In the intermediate coverage range no long range order of the overlayer is established and we find that uncorrelated islands of preferred four-layer thickness are formed. Continuous Pb film with long range order emerges through islands coalescence close to a coverage of 4 monolayers, upon which a more regular layer-by-layer growth mode sets in.
2014
http://www.sciencedirect.com/science/article/pii/S0039602814002295
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11368/2832727
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