We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO interface.
Measurement of Johnson noise induced by p-stops in silicon microstrip detectors
GIACOMINI, GABRIELE;BOSISIO, LUCIANO;RASHEVSKAYA, IRINA
2013-01-01
Abstract
We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO interface.File in questo prodotto:
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