Sfoglia per Autore
Ab-initio electronic structure calculation of the InAs multiple quantum wells in bulk GaAs
1996-01-01 Nacir, Tit; Peressi, Maria
Random pseudobinary ionic alloys: lattice energy and structural properties
1997-01-01 U., Tinivella; Peressi, Maria; A., Baldereschi
Band engineering at interfaces: theory andnumerical experiments
1998-01-01 Peressi, Maria; N., Binggeli; A., Baldereschi
Toward a transferable parametrization for carbon in a periodic semi-empirical molecular orbital scheme
1998-01-01 L., De Maria; S., Baroni; Peressi, Maria
Structural and electronic properties of Ga2Se3
1998-01-01 Peressi, Maria; Baldereschi, A.
Floating bonds and gap statesin a-Si and a-Si:H from first principles calculations
1999-01-01 Fornari, M.; Peressi, Maria; DE GIRONCOLI, S.; Baldereschi, A.
Band offsets and stability at BeTe/ZnSe (100) heterojunctions
2000-01-01 F., Bernardini; Peressi, Maria; V., Fiorentini
Coordination defects in a-Si and a-Si:H :a characterization from first principles calculations
2000-01-01 Peressi, Maria; Fornari, M.; DE GIRONCOLI, S.; DE SANTIS, L.; Baldereschi, A.
Band Discontinuities in ZnMgSe/ZnCdSe(001) Lattice-matched Heterostructures
2001-01-01 Pelucchi, E.; Rubini, S.; Bonanni, B.; Franciosi, Alfonso; Peressi, Maria
Role of defects in the electronic properties ofamorphous/crystalline Si interfaces
2001-01-01 Peressi, Maria; Colombo, L; DE GIRONCOLI, S.
Electron localization in the insulating state: Application tocrystalline semiconductors
2001-01-01 C., Sgiarovello; Peressi, Maria; Resta, Raffaele
Wannier functions characterization of floating bonds in a-Si
2001-01-01 Fornari, M; Marzari, N; Peressi, Maria; Baldereschi, Alfonso
Interface states at ZnSe/Ge heterojunctions: the role of atomic interdiffusion and disorder
2002-01-01 Peressi, Maria; Favot, F.; Cangiani, G.; Baldereschi, Alfonso
Spintronic Properties of Mn-Based Semiconductor Heterostructures
2003-01-01 A., Debernardi; Peressi, Maria; Baldereschi, Alfonso; S., Picozzi; A., Continenza; F., Antoniella; A., Stroppa; A., Moscaconte
Atomic-scale numerical model of c-Si/a-Si:H interfaces
2003-01-01 Peressi, Maria; M., Tosolini; L., Colombo
Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs
2003-01-01 A., Debernardi; Peressi, Maria; Baldereschi, Alfonso
Electronic properties of Mn-compounds under strain
2003-01-01 Debernardi, A.; Peressi, Maria; Baldereschi, Alfonso
Magnetic phase transition in strained MnAs compound
2003-01-01 A., Debernardi; Peressi, Maria; A., Baldereschi
Coverage-dependent hydrogen adsorption site determinationon Rh(100) by means of high-resolution core-level Spectroscopy
2004-01-01 Vesselli, Erik; Baraldi, Alessandro; Bondino, F; Comelli, Giovanni; Peressi, Maria; Rosei, Renzo
Stabilization of half metallicity in Mn-doped silicon upon Ge alloying
2004-01-01 S., Picozzi; F., Antoniella; A., Continenza; A., Moscaconte; A., Debernardi; Peressi, Maria
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