High resolution transmission electron microscopy (TEM), high angle annular dark field atomic imaging and energy-dispersive spectroscopy (EDS) studies were performed on pseudomorphic ZnSe/GaAs(001) heterostructures grown using the two different interface fabrication procedures that produce epilayers with minimum native defect densities (below 10 4 cm-2). Despite the apparent differences in the two procedures our TEM and EDS studies detected the formation of similarly Se rich interfaces in both cases.
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures
Colli, A;Franciosi, A
2003-01-01
Abstract
High resolution transmission electron microscopy (TEM), high angle annular dark field atomic imaging and energy-dispersive spectroscopy (EDS) studies were performed on pseudomorphic ZnSe/GaAs(001) heterostructures grown using the two different interface fabrication procedures that produce epilayers with minimum native defect densities (below 10 4 cm-2). Despite the apparent differences in the two procedures our TEM and EDS studies detected the formation of similarly Se rich interfaces in both cases.File in questo prodotto:
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