Hydrogen is known to passivate nitrogen in dilute nitrides, such as Ga(AsN) and Ga(PN). By focusing an electron beam on the surface of hydrogenated GaAs1−xNx/GaAs (GaP1−yNy/GaP) we remove hydrogen atoms from their passivation sites, thus leading to a controlled decrease of the crystal band gap in the spatial region where the e-beam is steered. The area designated by the electron beam acts in all respects as a potential well for carriers. Cycling the samples several times between T=5 K and room temperature, the same CL images and spectra were recorded thus demonstrating the thermal stability of the H displacement process. The 100% pre hydrogenation conditions are achieved after 30–40 sec of irradiation at T=5 K.
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence / Salviati, G., Lazzarini, L., Armani, N., Felici, M., Polimeni, A., Capizzi, M., Martelli, F., Rubini, S., Franciosi, A.. - STAMPA. - 120:(2008), pp. 453-458. (Microscopy of Semiconducting Materials 2007 Cambridge, UK 2-5 April 2007) [10.1007/978-1-4020-8615-1].
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence
FRANCIOSI, ALFONSO
2008-01-01
Abstract
Hydrogen is known to passivate nitrogen in dilute nitrides, such as Ga(AsN) and Ga(PN). By focusing an electron beam on the surface of hydrogenated GaAs1−xNx/GaAs (GaP1−yNy/GaP) we remove hydrogen atoms from their passivation sites, thus leading to a controlled decrease of the crystal band gap in the spatial region where the e-beam is steered. The area designated by the electron beam acts in all respects as a potential well for carriers. Cycling the samples several times between T=5 K and room temperature, the same CL images and spectra were recorded thus demonstrating the thermal stability of the H displacement process. The 100% pre hydrogenation conditions are achieved after 30–40 sec of irradiation at T=5 K.Pubblicazioni consigliate
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