In the present paper we discuss the electronic properties of semiconductor hetero junctions, focussing on the band offset problem. We address interface-specific phenomena, where the conditions of growth-including controlled contamination and strain effects-may significantly alter the properties of the junction. We study the effects of ultrathin intralayers (i.e. heterovalen-t implantation) both at homojunctions (such as GaAs/Ge/GaAs) and heterojunctions (such as GaAs/Si/AlAs). In both cases, our theory demonstrates how the intralayers control the band offset: this result is confirmed by recent experimental observation in several systems. We then consider the band-offset engineering at lattice-mismatched heterojunctions, studying the paradigmatic case GaAs/Si. We evaluate the band-offset for several fully relaxed inequivalent interfaces. Both macroscopic strain and microscopic morphology effects are considered.

Band offsets engineering at semiconductor heterojunctions

Peressi M.;Baldereschi A.;Resta R.;Baroni S.
1993-01-01

Abstract

In the present paper we discuss the electronic properties of semiconductor hetero junctions, focussing on the band offset problem. We address interface-specific phenomena, where the conditions of growth-including controlled contamination and strain effects-may significantly alter the properties of the junction. We study the effects of ultrathin intralayers (i.e. heterovalen-t implantation) both at homojunctions (such as GaAs/Ge/GaAs) and heterojunctions (such as GaAs/Si/AlAs). In both cases, our theory demonstrates how the intralayers control the band offset: this result is confirmed by recent experimental observation in several systems. We then consider the band-offset engineering at lattice-mismatched heterojunctions, studying the paradigmatic case GaAs/Si. We evaluate the band-offset for several fully relaxed inequivalent interfaces. Both macroscopic strain and microscopic morphology effects are considered.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11368/2997851
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact