NICHETTI, CAMILLA
 Distribuzione geografica
Continente #
NA - Nord America 606
EU - Europa 370
AS - Asia 84
SA - Sud America 1
Totale 1061
Nazione #
US - Stati Uniti d'America 605
IT - Italia 99
SE - Svezia 95
PL - Polonia 90
CN - Cina 39
DE - Germania 19
BG - Bulgaria 18
IE - Irlanda 16
JP - Giappone 9
BE - Belgio 8
IN - India 8
TR - Turchia 6
FR - Francia 5
MY - Malesia 5
UA - Ucraina 5
KR - Corea 4
VN - Vietnam 4
AT - Austria 3
GB - Regno Unito 3
FI - Finlandia 2
HK - Hong Kong 2
HR - Croazia 2
IR - Iran 2
PK - Pakistan 2
RU - Federazione Russa 2
TW - Taiwan 2
BD - Bangladesh 1
BR - Brasile 1
CA - Canada 1
CH - Svizzera 1
NL - Olanda 1
SI - Slovenia 1
Totale 1061
Città #
Chandler 105
Fairfield 91
Warsaw 90
Trieste 62
Wilmington 43
Houston 38
Seattle 37
Woodbridge 37
Cambridge 34
Ann Arbor 33
Princeton 27
Ashburn 22
Dublin 18
Sofia 18
Beijing 12
Bremen 11
Jacksonville 9
Redwood City 9
Redmond 8
Falls Church 7
Brussels 6
Dearborn 6
Izmir 5
Dong Ket 4
Jinan 4
Nanchang 4
Nanjing 4
Phoenix 4
Rome 4
Udine 4
Des Moines 3
Augusta 2
Boardman 2
Boydton 2
Chittaurgarh 2
Columbus 2
Costa Mesa 2
Council Bluffs 2
Freising 2
Fremont 2
Haikou 2
Hefei 2
Helsinki 2
Islamabad 2
Leuven 2
Mumbai 2
North Bergen 2
Norwalk 2
Pavia 2
Rosental 2
San Diego 2
San Francisco 2
San Michele Al Tagliamento 2
Shenzhen 2
Taipei 2
Zhengzhou 2
Ahmedabad 1
Ankara 1
Ardabil 1
Atlanta 1
Basovizza 1
Behjan 1
Bowling Green 1
Cary 1
Central District 1
Cerovlje 1
Charlottesville 1
Chengdu 1
Chennai 1
Codroipo 1
Eatontown 1
Edinburgh 1
Flensburg 1
Fontanafredda 1
Gazipur 1
Gif-sur-yvette 1
Ipoh 1
Kuala Lumpur 1
Leawood 1
Lequile 1
Livermore 1
Ljungaverk 1
Los Angeles 1
Marseille 1
Milan 1
Scafati 1
Seoul 1
Somerville 1
São Paulo 1
Tokyo 1
Tomsk 1
Toronto 1
Trento 1
Vienna 1
Wenzhou 1
Xian 1
Yicheng 1
Zurich 1
Totale 851
Nome #
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 223
Development of avalanche photodiodes with engineered band gap based upon III-V semiconductors 153
An improved nonlocal history-dependent model for gain and noise in avalanche photodiodes based on energy balance equation 153
A new expression for the gain-noise relation of single-carrier avalanche photodiodes with arbitrary staircase multiplication regions 125
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 91
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection 72
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 69
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 48
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III-V Semiconductor Alloys 45
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization 43
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 39
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 36
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes 33
Synchrotron Radiation Study of Gain, Noise, and Collection Efficiency of GaAs SAM-APDs with Staircase Structure 25
Totale 1155
Categoria #
all - tutte 2288
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2288


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/20182 0000 00 00 0002
2018/201989 0012 00 17 345219
2019/2020269 12211948 1732 2419 20121629
2020/2021231 2173523 189 914 30272018
2021/2022243 1471516 825 94 3443761
2022/2023311 26622155 2445 421 39590
Totale 1155