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EnglishThis work focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a δ p-doped layer of carbon atoms, which ensures that after applying a reverse bias, the vast majority of the potential drops in the multiplication region. Therein, thin layers of AlGaAs and GaAs alternate periodically in a so-called staircase structure to create a periodic modulation of the band gap, which under bias enables a well-defined charge multiplication and results in a low multiplication noise. The influence of the concentration of carbon atoms in the δ p-doped layer on the device characteristics was investigated and experimental data are presented together with simulation results.
| Titolo: | Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation |
| Autori: | |
| Data di pubblicazione: | 2017 |
| Stato di pubblicazione: | Pubblicato |
| Rivista: | |
| Abstract: | This work focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a δ p-doped layer of carbon atoms, which ensures that after applying a reverse bias, the vast majority of the potential drops in the multiplication region. Therein, thin layers of AlGaAs and GaAs alternate periodically in a so-called staircase structure to create a periodic modulation of the band gap, which under bias enables a well-defined charge multiplication and results in a low multiplication noise. The influence of the concentration of carbon atoms in the δ p-doped layer on the device characteristics was investigated and experimental data are presented together with simulation results. |
| Handle: | http://hdl.handle.net/11368/2917692 |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/1748-0221/12/11/C11017 |
| URL: | http://iopscience.iop.org/article/10.1088/1748-0221/12/11/C11017 |
| Appare nelle tipologie: | 1.1 Articolo in Rivista |
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http://hdl.handle.net/11368/2917692
