This work focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a δ p-doped layer of carbon atoms, which ensures that after applying a reverse bias, the vast majority of the potential drops in the multiplication region. Therein, thin layers of AlGaAs and GaAs alternate periodically in a so-called staircase structure to create a periodic modulation of the band gap, which under bias enables a well-defined charge multiplication and results in a low multiplication noise. The influence of the concentration of carbon atoms in the δ p-doped layer on the device characteristics was investigated and experimental data are presented together with simulation results.

Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation

STEINHARTOVÁ, TEREZA
;
NICHETTI, CAMILLA;Antonelli M.;Cautero G.;Menk R. H.;DRIUSSI, FRANCO;Arfelli F.;Zilio S. Dal;BIASIOL, GIORGIO
2017-01-01

Abstract

This work focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a δ p-doped layer of carbon atoms, which ensures that after applying a reverse bias, the vast majority of the potential drops in the multiplication region. Therein, thin layers of AlGaAs and GaAs alternate periodically in a so-called staircase structure to create a periodic modulation of the band gap, which under bias enables a well-defined charge multiplication and results in a low multiplication noise. The influence of the concentration of carbon atoms in the δ p-doped layer on the device characteristics was investigated and experimental data are presented together with simulation results.
File in questo prodotto:
File Dimensione Formato  
publisher version IOP.pdf

Accesso chiuso

Tipologia: Documento in Versione Editoriale
Licenza: Copyright Editore
Dimensione 1.49 MB
Formato Adobe PDF
1.49 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11368/2917692
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 7
social impact