Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection

Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H.

doi:10.1088/1748-0221/15/02/C02013

This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a δ sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.

Titolo:	Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection
Autori:	NICHETTI, CAMILLA (Corresponding) Steinhartova T. ANTONELLI, MATIAS BIASIOLI, GABRIELE CAUTERO, GIUSEPPE DE ANGELIS, DARIO Pilotto A. Driussi F. Palestri P. Selmi L. ARFELLI, FULVIA Danailov M. Menk R. H. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2020
Stato di pubblicazione:	Pubblicato
Rivista:	JOURNAL OF INSTRUMENTATION
Abstract:	This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a δ sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.
Handle:	http://hdl.handle.net/11368/2966638
Digital Object Identifier (DOI):	http://dx.doi.org/10.1088/1748-0221/15/02/C02013
URL:	https://iopscience.iop.org/article/10.1088/1748-0221/15/02/C02013
Appare nelle tipologie:	1.1 Articolo in Rivista

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