This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a δ sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.

Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection

Nichetti C.
;
Antonelli M.;Biasiol G.;Cautero G.;De Angelis D.;Arfelli F.;
2020-01-01

Abstract

This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a δ sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.
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https://iopscience.iop.org/article/10.1088/1748-0221/15/02/C02013
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11368/2966638
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