This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a δ sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection / Nichetti, C., Steinhartova, T., Antonelli, M., Biasiol, G., Cautero, G., De Angelis, D., Pilotto, A., Driussi, F., Palestri, P., Selmi, L., Arfelli, F., Danailov, M., Menk, R.H.. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - ELETTRONICO. - 15:2(2020), pp. C02013."-"-C02013."-". [10.1088/1748-0221/15/02/C02013]
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection
Nichetti C.
;Steinhartova T.;Antonelli M.;Biasiol G.;Cautero G.;De Angelis D.;Arfelli F.;
2020-01-01
Abstract
This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a δ sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.| File | Dimensione | Formato | |
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