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EnglishThis work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a δ sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.
| Titolo: | Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection |
| Autori: | |
| Data di pubblicazione: | 2020 |
| Stato di pubblicazione: | Pubblicato |
| Rivista: | |
| Abstract: | This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a δ sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light. |
| Handle: | http://hdl.handle.net/11368/2966638 |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/1748-0221/15/02/C02013 |
| URL: | https://iopscience.iop.org/article/10.1088/1748-0221/15/02/C02013 |
| Appare nelle tipologie: | 1.1 Articolo in Rivista |
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Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11368/2966638
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