We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.

Microscopic Mechanisms of Self-compensation in Si d-doped GaAs

MODESTI, SILVIO;FRANCIOSI, ALFONSO
2004

Abstract

We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.
http://link.aps.org/doi/10.1103/PhysRevLett.92.086104
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11368/1694126
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