We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.
Titolo: | Microscopic Mechanisms of Self-compensation in Si d-doped GaAs | |
Autori: | ||
Data di pubblicazione: | 2004 | |
Stato di pubblicazione: | Pubblicato | |
Rivista: | ||
Abstract: | We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase. | |
Handle: | http://hdl.handle.net/11368/1694126 | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevLett.92.086104 | |
URL: | http://link.aps.org/doi/10.1103/PhysRevLett.92.086104 | |
Appare nelle tipologie: | 1.1 Articolo in Rivista |
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