Microscopic Mechanisms of Self-compensation in Si d-doped GaAs

We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.



Titolo: Microscopic Mechanisms of Self-compensation in Si d-doped GaAs
Autori: 
MODESTI, SILVIO
FRANCIOSI, ALFONSO
mostra contributor esterni 
Data di pubblicazione: 2004
Stato di pubblicazione: Pubblicato
Rivista: 
PHYSICAL REVIEW LETTERS  
Abstract: We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.
Handle: http://hdl.handle.net/11368/1694126
Digital Object Identifier (DOI): http://dx.doi.org/10.1103/PhysRevLett.92.086104
URL: http://link.aps.org/doi/10.1103/PhysRevLett.92.086104
Appare nelle tipologie:1.1 Articolo in Rivista

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