Microscopic Mechanisms of Self-compensation in Si d-doped GaAs

We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.



Titolo: Microscopic Mechanisms of Self-compensation in Si d-doped GaAs
Autori: 
MODESTI, SILVIO
FRANCIOSI, ALFONSO
mostra contributor esterni 
Data di pubblicazione: 2004
Stato di pubblicazione: Pubblicato
Rivista: 
PHYSICAL REVIEW LETTERS  
Abstract: We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.
Handle: http://hdl.handle.net/11368/1694126
Digital Object Identifier (DOI): http://dx.doi.org/10.1103/PhysRevLett.92.086104
URL: http://link.aps.org/doi/10.1103/PhysRevLett.92.086104
Appare nelle tipologie:1.1 Articolo in Rivista

File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
 
 
 
©2014 University of Trieste dove siamo Privacy
Piazzale Europa,1 34127 Trieste, Italia - Tel. +39 040.558.7111 - P.IVA 00211830328 - C.F. 80013890324 - P.E.C.: ateneo@pec.units.it
 Copyright © 2020