Photoemission Microscopy Investigation of Buried p-n GaAs Homojunctions and Al/n-GaAs Schottky Barriers

A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p{n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential prole across Al/GaAs Schottky junctions.