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EnglishA natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p{n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential prole across Al/GaAs Schottky junctions.
| Titolo: | Photoemission Microscopy Investigation of Buried p-n GaAs Homojunctions and Al/n-GaAs Schottky Barriers | |
| Autori: | ||
| Data di pubblicazione: | 2002 | |
| Rivista: | ||
| Abstract: | A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p{n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential prole across Al/GaAs Schottky junctions. | |
| Handle: | http://hdl.handle.net/11368/1694132 | |
| Appare nelle tipologie: | 1.1 Articolo in Rivista |
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