A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p{n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential prole across Al/GaAs Schottky junctions.

Photoemission Microscopy Investigation of Buried p-n GaAs Homojunctions and Al/n-GaAs Schottky Barriers

CAUTERO, GIUSEPPE;FRANCIOSI, ALFONSO;
2002

Abstract

A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p{n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential prole across Al/GaAs Schottky junctions.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11368/1694132
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