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EnglishThe electron effective mass, me, has been determined by magnetophotoluminescence in as-grown and hydrogenated Ga As1-x Nx samples for a wide range of nitrogen concentrations (from x<0.01% to x=1.78%). A modified kp model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental me values up to x≤0.6%. Experimental and theoretical evidence is provided for the N complexes responsible for the nonmonotonic and initially puzzling compositional dependence of the electron mass.
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http://hdl.handle.net/11368/1694158| Titolo: | Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs(1-x)N(x) |
| Autori interni: | FRANCIOSI, ALFONSO |
| Data di pubblicazione: | 2006 |
| Rivista: | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS |
| Abstract: | The electron effective mass, me, has been determined by magnetophotoluminescence in as-grown and hydrogenated Ga As1-x Nx samples for a wide range of nitrogen concentrations (from x<0.01% to x=1.78%). A modified kp model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental me values up to x≤0.6%. Experimental and theoretical evidence is provided for the N complexes responsible for the nonmonotonic and initially puzzling compositional dependence of the electron mass. |
| Handle: | http://hdl.handle.net/11368/1694158 |
| Digital Object Identifier (DOI): | 10.1103/PhysRevB.73.073201 |
| URL: | http://prb.aps.org/abstract/PRB/v73/i7/e073201 |
| Appare nelle tipologie: | 1.1 Articolo in Rivista |
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