The Sn/Si(111)-(√3×√3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [ G. Profeta and E. Tosatti Phys. Rev. Lett. 98 086401 (2007).

Insulating Ground State of Sn/Si(111)-(3x3) R30°

MODESTI, SILVIO;
2007

Abstract

The Sn/Si(111)-(√3×√3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [ G. Profeta and E. Tosatti Phys. Rev. Lett. 98 086401 (2007).
PHYSICAL REVIEW LETTERS
http://prl.aps.org/pdf/PRL/v98/i12/e126401
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11368/1696355
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