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EnglishThe Sn/Si(111)-(√3×√3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [ G. Profeta and E. Tosatti Phys. Rev. Lett. 98 086401 (2007).
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http://hdl.handle.net/11368/1696355| Titolo: | Insulating Ground State of Sn/Si(111)-(3x3) R30° |
| Autori interni: | MODESTI, SILVIO |
| Data di pubblicazione: | 2007 |
| Rivista: | PHYSICAL REVIEW LETTERS |
| Abstract: | The Sn/Si(111)-(√3×√3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [ G. Profeta and E. Tosatti Phys. Rev. Lett. 98 086401 (2007). |
| Handle: | http://hdl.handle.net/11368/1696355 |
| Digital Object Identifier (DOI): | 10.1103/PhysRevLett.98.126401 |
| URL: | http://prl.aps.org/pdf/PRL/v98/i12/e126401 |
| Appare nelle tipologie: | 1.1 Articolo in Rivista |
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