The Sn/Si(111)-(√3×√3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [ G. Profeta and E. Tosatti Phys. Rev. Lett. 98 086401 (2007).

Insulating Ground State of Sn/Si(111)-(3x3) R30° / Modesti, Silvio; Petaccia, L; Ceballos, G; Vobornik, I; Panaccione, G; Rossi, G; Ottaviano, L; Larciprete, R; Lizzit, S; Goldoni, A.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 98 / 2007:(2007), pp. 126401-1-126401-4. [10.1103/PhysRevLett.98.126401]

Insulating Ground State of Sn/Si(111)-(3x3) R30°

MODESTI, SILVIO;
2007-01-01

Abstract

The Sn/Si(111)-(√3×√3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [ G. Profeta and E. Tosatti Phys. Rev. Lett. 98 086401 (2007).
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11368/1696355
 Avviso

Registrazione in corso di verifica.
La registrazione di questo prodotto non è ancora stata validata in ArTS.

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 77
  • ???jsp.display-item.citation.isi??? 77
social impact