Band offsets can be modified at semiconductor heterojunctions or created at homojunctions by depositing thin intralayers of group-IV atoms at III-V/III-V polar interfaces. We present here a theoretical study of Si and Ge intralayers deposited along (001) at GaAs and AlAs homojunctions, and at GaAs/AlAs heterojunctions. Our results show that the offset is very sensitive to the coverage and abruptness of the intralayer. A comparison with recent experiments for Si in GaAs/AlAs suggests that Si atoms are confined over two atomic planes for coverages lower than about 0.5 monolayers, whereas for higher coverages Si diffusion occurs.
Tuning band offsets at semiconductor interfaces by intralayer deposition
PERESSI, MARIA;RESTA, Raffaele;BALDERESCHI, ALFONSO
1991-01-01
Abstract
Band offsets can be modified at semiconductor heterojunctions or created at homojunctions by depositing thin intralayers of group-IV atoms at III-V/III-V polar interfaces. We present here a theoretical study of Si and Ge intralayers deposited along (001) at GaAs and AlAs homojunctions, and at GaAs/AlAs heterojunctions. Our results show that the offset is very sensitive to the coverage and abruptness of the intralayer. A comparison with recent experiments for Si in GaAs/AlAs suggests that Si atoms are confined over two atomic planes for coverages lower than about 0.5 monolayers, whereas for higher coverages Si diffusion occurs.File in questo prodotto:
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