The formation of a hexagonal boron nitride (h-BN) layer through dissociation of borazine (B3N3H6) molecules on Ir(111) has been investigated by a combination of X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure, temperature-programmed desorption, and lowenergy electron diffraction.
Epitaxial Growth of Hexagonal Boron Nitride on Ir(111) / Orlando, Fabrizio; Rosanna, Larciprete; Paolo, Lacovig; Ilan, Boscarato; Baraldi, Alessandro; Silvano, Lizzit. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - STAMPA. - 116:(2012), pp. 157-164. [10.1021/jp207571n]
Epitaxial Growth of Hexagonal Boron Nitride on Ir(111)
ORLANDO, FABRIZIO;BARALDI, Alessandro;
2012-01-01
Abstract
The formation of a hexagonal boron nitride (h-BN) layer through dissociation of borazine (B3N3H6) molecules on Ir(111) has been investigated by a combination of X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure, temperature-programmed desorption, and lowenergy electron diffraction.File in questo prodotto:
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