The formation of a hexagonal boron nitride (h-BN) layer through dissociation of borazine (B3N3H6) molecules on Ir(111) has been investigated by a combination of X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure, temperature-programmed desorption, and lowenergy electron diffraction.
Epitaxial Growth of Hexagonal Boron Nitride on Ir(111)
ORLANDO, FABRIZIO;BARALDI, Alessandro;
2012-01-01
Abstract
The formation of a hexagonal boron nitride (h-BN) layer through dissociation of borazine (B3N3H6) molecules on Ir(111) has been investigated by a combination of X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure, temperature-programmed desorption, and lowenergy electron diffraction.File in questo prodotto:
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