The stress dependence of the Raman bands of silicon nitride (β-Si3N4) have been investigated and applied to indentation experiments. Seven high-frequency bands have been found to have linear and negative stress dependencies. On the other hand, low frequency bands (namely 183, 205 and 226cm-1 bands) showed small positive correlations with the stress. The piezospectroscopic (PS) coefficients of all the observed Raman bands have been determined. As an application, one of the PS coefficients has been used to determine the stress distribution around a triangular indentation.
Mapping of residual stresses around an indentation in β-Si3N4 using Raman spectroscopy
SERGO, VALTER;
1997-01-01
Abstract
The stress dependence of the Raman bands of silicon nitride (β-Si3N4) have been investigated and applied to indentation experiments. Seven high-frequency bands have been found to have linear and negative stress dependencies. On the other hand, low frequency bands (namely 183, 205 and 226cm-1 bands) showed small positive correlations with the stress. The piezospectroscopic (PS) coefficients of all the observed Raman bands have been determined. As an application, one of the PS coefficients has been used to determine the stress distribution around a triangular indentation.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
