Exposure of Cs surfaces to O2 causes ejection of O- ions with low yields (∼10-8 per incident O2 molecule) during the first stages of dissociative chemisorption (followed by exoelectron emission at higher exposures), although the work function of the surface exceeds the electron affinity of O and the energetics of the overall reaction is almost zero. A mechanism is proposed whereafter the release of O- is a consequence of strong repulsion in O22- species intermediately formed in front of the surface.
O- escape during the oxidation of cesium / T., Greber; R., Grobecker; Morgante, Alberto; A., Böttcher; G., Ertl. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 70:(1993), pp. 1331-1334. [10.1103/PhysRevLett.70.1331]
O- escape during the oxidation of cesium
MORGANTE, ALBERTO;
1993-01-01
Abstract
Exposure of Cs surfaces to O2 causes ejection of O- ions with low yields (∼10-8 per incident O2 molecule) during the first stages of dissociative chemisorption (followed by exoelectron emission at higher exposures), although the work function of the surface exceeds the electron affinity of O and the energetics of the overall reaction is almost zero. A mechanism is proposed whereafter the release of O- is a consequence of strong repulsion in O22- species intermediately formed in front of the surface.Pubblicazioni consigliate
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