Exposure of Cs surfaces to O2 causes ejection of O- ions with low yields (∼10-8 per incident O2 molecule) during the first stages of dissociative chemisorption (followed by exoelectron emission at higher exposures), although the work function of the surface exceeds the electron affinity of O and the energetics of the overall reaction is almost zero. A mechanism is proposed whereafter the release of O- is a consequence of strong repulsion in O22- species intermediately formed in front of the surface.
O- escape during the oxidation of cesium
MORGANTE, ALBERTO;
1993-01-01
Abstract
Exposure of Cs surfaces to O2 causes ejection of O- ions with low yields (∼10-8 per incident O2 molecule) during the first stages of dissociative chemisorption (followed by exoelectron emission at higher exposures), although the work function of the surface exceeds the electron affinity of O and the energetics of the overall reaction is almost zero. A mechanism is proposed whereafter the release of O- is a consequence of strong repulsion in O22- species intermediately formed in front of the surface.File in questo prodotto:
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