Photoluminescence in GaAs1-xPx near crossover at liquid He temperature gives evidence of a Γ-x interaction of the bound and free exciton. The interaction in the FE case is made possible by the breaking down of the translational symmetry of the Hamiltonian due to fluctuations in the random-alloy potential. The matrix elements of such interaction are found equal to 0.5 and 3.5 meV for the free and donor-bound exciton respectively.
Γ-X mixing of the free and bound exciton in GaAs1-xPx
MODESTI, SILVIO;
1981-01-01
Abstract
Photoluminescence in GaAs1-xPx near crossover at liquid He temperature gives evidence of a Γ-x interaction of the bound and free exciton. The interaction in the FE case is made possible by the breaking down of the translational symmetry of the Hamiltonian due to fluctuations in the random-alloy potential. The matrix elements of such interaction are found equal to 0.5 and 3.5 meV for the free and donor-bound exciton respectively.File in questo prodotto:
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