The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations. The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.
High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping / Søren, Ulstrup; Marco, Bianchi; Richard, Hatch; Dandan, Guan; Baraldi, Alessandro; Dario, Alfè; Liv, Hornekær; Philip, Hofmann. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - ELETTRONICO. - 86:(2012), pp. 161402-161406. [10.1103/PhysRevB.86.161402]
High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping
BARALDI, Alessandro;
2012-01-01
Abstract
The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations. The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.Pubblicazioni consigliate
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