We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low-temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue-emitting nanowires have been obtained. The growth mecha- nism is discussed with the help of in-situ and ex-situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO-coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics.
Strong blue emission from ZnSe nanowires grown at low temperature / Zannier, Valentina; Faustino, Martelli; Vincenzo, Grillo; Jasper R., Plaisier; Andrea, Lausi; Rubini, Silvia. - In: PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS. - ISSN 1862-6254. - 8:2(2014), pp. 182-186. [10.1002/pssr.201308264]
Strong blue emission from ZnSe nanowires grown at low temperature
ZANNIER, VALENTINA;RUBINI, SILVIA
2014-01-01
Abstract
We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low-temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue-emitting nanowires have been obtained. The growth mecha- nism is discussed with the help of in-situ and ex-situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO-coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
