We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low-temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue-emitting nanowires have been obtained. The growth mecha- nism is discussed with the help of in-situ and ex-situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO-coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics.
Strong blue emission from ZnSe nanowires grown at low temperature
ZANNIER, VALENTINA;RUBINI, SILVIA
2014-01-01
Abstract
We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low-temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue-emitting nanowires have been obtained. The growth mecha- nism is discussed with the help of in-situ and ex-situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO-coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics.File in questo prodotto:
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