An important application of photoemission spectromicroscopy would be to measure heterostructures and semiconductor devices in cross section to directly determine band offsets and band bending.We present here studies of p-n GaAs homojunctions and Al/GaAs Schottky junctions fabricated by molecular-beam epitaxy. Our results suggest that a minimum experimental uncertainty of about 0.15 eV will effect band offset determination. In general, useful quantitative information on the junction electrostatics can be obtained provided that the experimental data are analyzed to substract the diffuse photon background and take into account the intensity profile of the photon spot.

Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy

CAUTERO, GIUSEPPE;FRANCIOSI, ALFONSO;
2002

Abstract

An important application of photoemission spectromicroscopy would be to measure heterostructures and semiconductor devices in cross section to directly determine band offsets and band bending.We present here studies of p-n GaAs homojunctions and Al/GaAs Schottky junctions fabricated by molecular-beam epitaxy. Our results suggest that a minimum experimental uncertainty of about 0.15 eV will effect band offset determination. In general, useful quantitative information on the junction electrostatics can be obtained provided that the experimental data are analyzed to substract the diffuse photon background and take into account the intensity profile of the photon spot.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11368/2794623
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 4
social impact