We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO interface.
Measurement of Johnson noise induced by p-stops in silicon microstrip detectors / Giacomini, Gabriele; Bosisio, Luciano; Rashevskaya, Irina. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 60:5(2013), pp. 6588941.4022-6588941.4025. [10.1109/TNS.2013.2276069]
Measurement of Johnson noise induced by p-stops in silicon microstrip detectors
GIACOMINI, GABRIELE;BOSISIO, LUCIANO;RASHEVSKAYA, IRINA
2013-01-01
Abstract
We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO interface.Pubblicazioni consigliate
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