A key challenge for the development of plasmonic nanodevices is their integration into active semiconducting structures. Gold-catalysed semiconductor nanowires are promising candidates for their bottom-up growth process that aligns a single gold nanoparticle at each nanowire apex. Unfortunately these show extremely poor plasmonic properties. In this work, we propose a way to enhance their plasmonic resonance up to those of ideal and isolated gold nanoparticles. A suitable purification protocol compatible with GaAs and ZnSe molecular beam epitaxy of nanowires is used to produce plasmonic active nanowires, which were used to enhance the Raman signal of pentacene and graphene oxide. Enhancement factors up to three orders of magnitude are demonstrated.

Enhanced plasmonic properties of gold-catalysed semiconductor nanowires

ZANNIER, VALENTINA;CASSESE, DAMIANO;RUBINI, SILVIA;LAZZARINO, MARCO
2014

Abstract

A key challenge for the development of plasmonic nanodevices is their integration into active semiconducting structures. Gold-catalysed semiconductor nanowires are promising candidates for their bottom-up growth process that aligns a single gold nanoparticle at each nanowire apex. Unfortunately these show extremely poor plasmonic properties. In this work, we propose a way to enhance their plasmonic resonance up to those of ideal and isolated gold nanoparticles. A suitable purification protocol compatible with GaAs and ZnSe molecular beam epitaxy of nanowires is used to produce plasmonic active nanowires, which were used to enhance the Raman signal of pentacene and graphene oxide. Enhancement factors up to three orders of magnitude are demonstrated.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11368/2843419
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