Band structure characterization of WS2 grown by chemical vapor deposition

Tanabe, Iori; Gomez, Michael; Coley, William C.; Duy, Le; Echeverria, Elena M.; Stecklein, Gordon; KANDYBA, VIKTOR; Balijepalli, Santosh K.; Klee, Velveth; Nguyen, Ariana E.; Preciado, Edwin; I. Hsi, Lu; Bobek, Sarah; Barroso, David; Martinez Ta, Dominic; Barinov, Alexei; Rahman, Talat S.; Dowben, Peter A.; Crowell, Paul A.; Bartels, Ludwig

doi:10.1063/1.4954278

Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K-point to be 420 ± 20 meV with a hole effective mass of −0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and −0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.

Titolo:	Band structure characterization of WS2 grown by chemical vapor deposition
Autori:	Tanabe, Iori Gomez, Michael Coley, William C. Le, Duy Echeverria, Elena M. Stecklein, Gordon KANDYBA, VIKTOR Balijepalli, Santosh K. Klee, Velveth Nguyen, Ariana E. Preciado, Edwin Lu, I. Hsi Bobek, Sarah Barroso, David Martinez Ta, Dominic Barinov, Alexei Rahman, Talat S. Dowben, Peter A. Crowell, Paul A. Bartels, Ludwig mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2016
Rivista:	APPLIED PHYSICS LETTERS
Abstract:	Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K-point to be 420 ± 20 meV with a hole effective mass of −0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and −0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.
Handle:	http://hdl.handle.net/11368/2891205
Digital Object Identifier (DOI):	http://dx.doi.org/10.1063/1.4954278
URL:	http://aip.scitation.org/doi/full/10.1063/1.4954278
Appare nelle tipologie:	1.1 Articolo in Rivista

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