High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping.
Erratum: High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (161402) DOI: 10.1103/PhysRevB.86.161402) / Ulstrup, Søren; Bianchi, Marco; Hatch, Richard; Guan, Dandan; Baraldi, Alessandro; Alfè, Dario; Hornekær, Liv; Hofmann, Philip. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - STAMPA. - 93:23(2016), pp. 239901.239901-239901.239901. [10.1103/PhysRevB.93.239901]
Erratum: High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (161402) DOI: 10.1103/PhysRevB.86.161402)
BARALDI, Alessandro;
2016-01-01
Abstract
High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping.File in questo prodotto:
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