We present a study on the growth and characterization of high-quality single-layer MoS2 with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS2 layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin- polarization of the valence band states near the K and -K points of the Brillouin zone. These ndings open up the possibility to exploit the spin and valley degrees of freedom
Titolo: | Epitaxial growth of single-orientation high-quality MoS2monolayers |
Autori: | |
Data di pubblicazione: | 2018 |
Stato di pubblicazione: | Pubblicato |
Rivista: | |
Abstract: | We present a study on the growth and characterization of high-quality single-layer MoS2 with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS2 layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin- polarization of the valence band states near the K and -K points of the Brillouin zone. These ndings open up the possibility to exploit the spin and valley degrees of freedom |
Handle: | http://hdl.handle.net/11368/2928949 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/2053-1583/aabb74 |
URL: | http://iopscience.iop.org/article/10.1088/2053-1583/aabb74/meta https://arxiv.org/abs/1802.02220 |
Appare nelle tipologie: | 1.1 Articolo in Rivista |
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