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EnglishWe present a study on the growth and characterization of high-quality single-layer MoS2 with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS2 layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin- polarization of the valence band states near the K and -K points of the Brillouin zone. These ndings open up the possibility to exploit the spin and valley degrees of freedom
| Titolo: | Epitaxial growth of single-orientation high-quality MoS2monolayers | |
| Autori: | ||
| Data di pubblicazione: | 2018 | |
| Stato di pubblicazione: | Pubblicato | |
| Rivista: | ||
| Abstract: | We present a study on the growth and characterization of high-quality single-layer MoS2 with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS2 layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin- polarization of the valence band states near the K and -K points of the Brillouin zone. These ndings open up the possibility to exploit the spin and valley degrees of freedom | |
| Handle: | http://hdl.handle.net/11368/2928949 | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/2053-1583/aabb74 | |
| URL: | http://iopscience.iop.org/article/10.1088/2053-1583/aabb74/meta https://arxiv.org/abs/1802.02220 | |
| Appare nelle tipologie: | 1.1 Articolo in Rivista |
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| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| Bana_2018_2D_Mater._5_035012.pdf | Articolo principale | Documento in Versione Editoriale | Copyright Editore | Administrator Richiedi una copia |
http://hdl.handle.net/11368/2928949
