A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.
Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO
Marrazzo A.;
2021-01-01
Abstract
A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.File | Dimensione | Formato | |
---|---|---|---|
Nano_Letters_2021_main_and_supplementary.pdf
Accesso chiuso
Descrizione: Main text and supplementary material
Tipologia:
Documento in Versione Editoriale
Licenza:
Copyright Editore
Dimensione
2.13 MB
Formato
Adobe PDF
|
2.13 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Nano_Letters_2021_main_and_supplementary-Post_print.pdf
Open Access dal 31/08/2022
Tipologia:
Bozza finale post-referaggio (post-print)
Licenza:
Digital Rights Management non definito
Dimensione
2.43 MB
Formato
Adobe PDF
|
2.43 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.