We have studied a near-surface, two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer, we estimated large electron mobilities on the order of 105 cm2/V. We have observed quantized conductance in a quantum point contact and determined the g factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate-tunable. Based on multiple Andreev reflections, the semiconductor-superconductor interface is transparent, with an induced gap of 125 μeV. Our results suggest that this InAs system is a viable platform for use in hybrid topological superconductor devices.

Near-surface InAs two-dimensional electron gas on a GaAs substrate: Characterization and superconducting proximity effect

Magdhi Kirti;
2022-01-01

Abstract

We have studied a near-surface, two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer, we estimated large electron mobilities on the order of 105 cm2/V. We have observed quantized conductance in a quantum point contact and determined the g factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate-tunable. Based on multiple Andreev reflections, the semiconductor-superconductor interface is transparent, with an induced gap of 125 μeV. Our results suggest that this InAs system is a viable platform for use in hybrid topological superconductor devices.
2022
5-dic-2022
Pubblicato
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.106.235404
File in questo prodotto:
File Dimensione Formato  
PhysRevB.106.235404.pdf

accesso aperto

Tipologia: Documento in Versione Editoriale
Licenza: Copyright Editore
Dimensione 2.72 MB
Formato Adobe PDF
2.72 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11368/3067718
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact