A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 mu m and 80 mu m. We report the results obtained with the prototype fabricated in this technology. (C) 2016 Elsevier B.V. All rights reserved.
CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments / Hirono, T; Barbero, M; Breugnon, P; Godiot, S; Gonella, L; Hemperek, T; Hugging, F; Kruger, H; Liu, J; Pangaud, P; Peric, I; Pohl, Dl; Rozanov, A; Rymaszewski, P; Wang, Aq; Wermes, N. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 831:(2016), pp. 94-98. [10.1016/j.nima.2016.01.088]
CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments
Gonella L;
2016-01-01
Abstract
A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 mu m and 80 mu m. We report the results obtained with the prototype fabricated in this technology. (C) 2016 Elsevier B.V. All rights reserved.Pubblicazioni consigliate
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