Rheotaxial growth and thermal oxidation (RGTO) for depositing thin films is a recognized technique in preparing gas sensitive semiconducting oxides. This paper presents a study performed by x-ray diffraction and scanning Auger microscopy of the mechanisms of growth and formation of the thin films of the new ternary compound Sn1-xFexOy with an iron content in the range 0 < x < 25 at. %. A structural model of this compound, which is found to be stable over a very large range of Sn/Fe ratios, can be derived by partially substituting Fe3+ ions in Sn4+ sites. This is an easy substitution in view of the similar values shown by the ionic radii (Fe3+ = 0.64 angstrom, Sn4+ = 0.71 angstrom) and the Pauling electronegativity (Fe3+ = 1.8, Sn4+ = 1.8) of these two ions. Experimental data, showing that this material is an excellent CO sensor, are reported.
FORMATION AND STRUCTURE OF TIN-IRON OXIDE THIN-FILM CO SENSORS
PARMIGIANI, FULVIO;
1994-01-01
Abstract
Rheotaxial growth and thermal oxidation (RGTO) for depositing thin films is a recognized technique in preparing gas sensitive semiconducting oxides. This paper presents a study performed by x-ray diffraction and scanning Auger microscopy of the mechanisms of growth and formation of the thin films of the new ternary compound Sn1-xFexOy with an iron content in the range 0 < x < 25 at. %. A structural model of this compound, which is found to be stable over a very large range of Sn/Fe ratios, can be derived by partially substituting Fe3+ ions in Sn4+ sites. This is an easy substitution in view of the similar values shown by the ionic radii (Fe3+ = 0.64 angstrom, Sn4+ = 0.71 angstrom) and the Pauling electronegativity (Fe3+ = 1.8, Sn4+ = 1.8) of these two ions. Experimental data, showing that this material is an excellent CO sensor, are reported.Pubblicazioni consigliate
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