Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction of the minimum critical fluence required for optical-induced amorphization when compared to the thin-film cases. We show that by using single-shot laser pulses{,} the investigated nanoparticles display a crystalline-to-amorphous transition{,} satisfying a mandatory requirement of a bit-memory element. These unprecedented results open a viable route to boost energy efficient phase-change processes.
Ultralow-fluence single-shot optical crystalline-to-amorphous phase transition in Ge–Sb–Te nanoparticles / Casarin, Barbara; Caretta, Antonio; Chen, Bin; Kooi, Bart J.; Ciprian, Roberta; Parmigiani, Fulvio; Malvestuto, Marco. - In: NANOSCALE. - ISSN 2040-3372. - ELETTRONICO. - 10:35(2018), pp. 16574-16580. [10.1039/C8NR04350G]
Ultralow-fluence single-shot optical crystalline-to-amorphous phase transition in Ge–Sb–Te nanoparticles
Barbara Casarin
;Antonio Caretta;Fulvio Parmigiani;Marco Malvestuto
2018-01-01
Abstract
Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction of the minimum critical fluence required for optical-induced amorphization when compared to the thin-film cases. We show that by using single-shot laser pulses{,} the investigated nanoparticles display a crystalline-to-amorphous transition{,} satisfying a mandatory requirement of a bit-memory element. These unprecedented results open a viable route to boost energy efficient phase-change processes.| File | Dimensione | Formato | |
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c8nr04350g2.pdf
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