We present an approach for the calculation of the Z2 topological invariant in non-crystalline two-dimensional quantum spin Hall insulators. While topological invariants were originally mathematically introduced for crystalline periodic systems, and crucially hinge on tracking the evolution of occupied states through the Brillouin zone, the introduction of disorder or dynamical effects can break the translational symmetry and imply the use of larger simulation cells, where the k-point sampling is typically reduced to the single Γ-point. Here, we introduce a single-point formula for the spin Chern number that enables to adopt the supercell framework, where a single Hamiltonian diagonalisation is performed. Inspired by the work of Prodan (2009 Phys. Rev. B 80 125327), our single-point approach allows to calculate the spin Chern number even when the spin operator Sz does not commute with the Hamiltonian, as in the presence of Rashba spin–orbit coupling. We validate our method on the Kane–Mele model, both pristine and in the presence of Anderson disorder. Finally, we investigate the disorder-driven transition from the trivial phase to the topological state known as topological Anderson insulator. Beyond disordered systems, our approach is particularly useful to investigate the role of defects, to study topological alloys and in the context of ab-initio molecular dynamics simulations at finite temperature.

Single-point spin Chern number in a supercell framework

Roberta Favata;Antimo Marrazzo
2023-01-01

Abstract

We present an approach for the calculation of the Z2 topological invariant in non-crystalline two-dimensional quantum spin Hall insulators. While topological invariants were originally mathematically introduced for crystalline periodic systems, and crucially hinge on tracking the evolution of occupied states through the Brillouin zone, the introduction of disorder or dynamical effects can break the translational symmetry and imply the use of larger simulation cells, where the k-point sampling is typically reduced to the single Γ-point. Here, we introduce a single-point formula for the spin Chern number that enables to adopt the supercell framework, where a single Hamiltonian diagonalisation is performed. Inspired by the work of Prodan (2009 Phys. Rev. B 80 125327), our single-point approach allows to calculate the spin Chern number even when the spin operator Sz does not commute with the Hamiltonian, as in the presence of Rashba spin–orbit coupling. We validate our method on the Kane–Mele model, both pristine and in the presence of Anderson disorder. Finally, we investigate the disorder-driven transition from the trivial phase to the topological state known as topological Anderson insulator. Beyond disordered systems, our approach is particularly useful to investigate the role of defects, to study topological alloys and in the context of ab-initio molecular dynamics simulations at finite temperature.
File in questo prodotto:
File Dimensione Formato  
Favata_2023_Electron._Struct._5_014005.pdf

Accesso chiuso

Tipologia: Documento in Versione Editoriale
Licenza: Copyright dell'editore
Dimensione 851.52 kB
Formato Adobe PDF
851.52 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Favata_2023_Electron._Struct._5_014005-Post_print.pdf

Open Access dal 04/01/2024

Tipologia: Bozza finale post-referaggio (post-print)
Licenza: Creative commons
Dimensione 1.32 MB
Formato Adobe PDF
1.32 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11368/3041299
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 6
social impact