ArTS Archivio della ricerca di Trieste

FRANCIOSI, ALFONSO
 Distribuzione geografica
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Continente #
NA - Nord America 6.199
AS - Asia 2.830
EU - Europa 2.373
SA - Sud America 258
AF - Africa 71
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 2
Totale 11.745
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Nazione #
US - Stati Uniti d'America 6.142
SG - Singapore 978
CN - Cina 821
UA - Ucraina 486
SE - Svezia 347
IT - Italia 305
HK - Hong Kong 288
BR - Brasile 209
VN - Vietnam 205
KR - Corea 194
FR - Francia 189
GB - Regno Unito 171
TR - Turchia 169
FI - Finlandia 167
DE - Germania 157
PL - Polonia 102
RU - Federazione Russa 91
IE - Irlanda 76
BG - Bulgaria 73
IN - India 46
CZ - Repubblica Ceca 45
CH - Svizzera 42
NL - Olanda 38
CA - Canada 35
BE - Belgio 30
MA - Marocco 27
AR - Argentina 23
MX - Messico 18
BD - Bangladesh 17
SN - Senegal 17
JP - Giappone 15
PK - Pakistan 15
IQ - Iraq 13
ES - Italia 11
EU - Europa 11
ZA - Sudafrica 11
EC - Ecuador 7
JO - Giordania 7
LT - Lituania 7
AT - Austria 6
PH - Filippine 6
VE - Venezuela 6
CO - Colombia 5
TH - Thailandia 5
AE - Emirati Arabi Uniti 4
CI - Costa d'Avorio 4
HR - Croazia 4
KG - Kirghizistan 4
MY - Malesia 4
NP - Nepal 4
RO - Romania 4
SA - Arabia Saudita 4
TW - Taiwan 4
UZ - Uzbekistan 4
CL - Cile 3
DK - Danimarca 3
DZ - Algeria 3
IL - Israele 3
KZ - Kazakistan 3
PT - Portogallo 3
SK - Slovacchia (Repubblica Slovacca) 3
TN - Tunisia 3
AL - Albania 2
AU - Australia 2
AZ - Azerbaigian 2
BY - Bielorussia 2
EG - Egitto 2
JM - Giamaica 2
KH - Cambogia 2
KW - Kuwait 2
PY - Paraguay 2
SI - Slovenia 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BW - Botswana 1
CG - Congo 1
CR - Costa Rica 1
GR - Grecia 1
HN - Honduras 1
HU - Ungheria 1
ID - Indonesia 1
IR - Iran 1
KE - Kenya 1
LB - Libano 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MC - Monaco 1
MM - Myanmar 1
OM - Oman 1
PS - Palestinian Territory 1
QA - Qatar 1
RS - Serbia 1
RW - Ruanda 1
SY - Repubblica araba siriana 1
Totale 11.745
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Città #
Fairfield 712
Woodbridge 560
Singapore 538
Ashburn 533
Ann Arbor 467
Houston 465
Jacksonville 418
Chandler 344
Wilmington 342
Hefei 324
Seattle 303
Hong Kong 285
San Jose 241
Cambridge 217
Seoul 193
Beijing 179
Izmir 154
Boardman 151
Princeton 146
Chicago 94
Santa Clara 92
Dublin 76
Bremen 73
Sofia 73
Zgierz 71
Columbus 70
Lauterbourg 68
Ho Chi Minh City 65
The Dalles 59
Buffalo 55
Hanoi 54
Los Angeles 51
Milan 48
Trieste 46
Prague 44
Moscow 43
Bern 39
Dallas 35
San Diego 35
Des Moines 32
Verona 32
Brussels 29
New York 27
Dearborn 26
Frankfurt am Main 25
Düsseldorf 23
Casablanca 22
São Paulo 22
Helsinki 20
Dakar 17
Warsaw 17
London 15
Montreal 15
Phoenix 15
Brooklyn 13
Tianjin 13
Tokyo 13
Pune 12
Edinburgh 11
Fremont 11
Chennai 10
Norwalk 10
Orem 10
Atlanta 9
Guangzhou 9
Islamabad 9
Mestre 9
Shanghai 9
Baghdad 8
Boston 8
Kraków 8
Kunming 8
San Francisco 8
Amman 7
Johannesburg 7
Rio de Janeiro 7
Washington 7
Bắc Ninh 6
Bến Tre 6
Curitiba 6
Da Nang 6
Hải Dương 6
Manchester 6
Muggia 6
Munich 6
Nanjing 6
Amsterdam 5
Auburn Hills 5
Belo Horizonte 5
Campinas 5
Caracas 5
Council Bluffs 5
Denver 5
Jinan 5
Pittsburgh 5
Salerno 5
Shenyang 5
Toronto 5
Turku 5
Vienna 5
Totale 8.440
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Nome #
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence 263
Contactless Monitoring of the Diameter-dependent Conductivity of GaAs Nanowires 244
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 240
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 232
Controlling Interface Reactivity and Schottky Barrier Height in Au/ZnSe(001) Junctions 217
Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging 210
Assessing the Projects on the ESFRI Roadmap 208
Cross-sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures 207
Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy 206
Cathodoluminescence Spectroscopy of Deep Defect Levels at the ZnSe/GaAs Interface with Composition-control Interface Layer 202
Nitrogen-induced hindering of In incorporation in InGaAsN 200
Andreev Reflection in Engineered Al/Si/InxGa1-xAs(001) Junctions 195
Band Discontinuities in ZnMgSe/ZnCdSe(001) Lattice-matched Heterostructures 195
Controlling the Native Stacking Fault Density in II-VI/III-V Heterostructures 191
Catalyst incorporation in ZnSe nanowires 188
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces 186
Photoemission Microscopy Investigation of Buried p-n GaAs Homojunctions and Al/n-GaAs Schottky Barriers 185
1.26 µm Intersubband Transitions in In0.3Ga0.7As/AlAs Quantum Wells 185
Local interface composition and band discontinuities in heterovalent heterostructures 185
CdTe Epitaxial Layers in ZnSe-based Heterostructures 183
Photoreflectance and Reflectance Investigation of Deuterium-irradiated GaAsN 182
Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy 180
Cavity Size and Temperature Dependence of Stimulated Emission in Single Zn1-xCdxSe/ZnSe Quantum-well Lasers 177
Structure and Growth Mechanism of ZnSe Nanowires 176
GaAs Nanowires by Mn-catalysed Molecular Beam Epitaxy 173
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures 168
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires 166
null 161
Formation and Dissolution of D-N Complexes in Dilute Nitrides 160
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy 159
Photocapacitance Study of Bulk Deep Levels in ZnSe Grown by Molecular Beam Epitaxy 159
Excitonic Properties and Band Alignment in Lattice-matched ZnCdSe/ZnMgSe Multiple Quantum Well Structures 158
Cathodoluminescence from InGaAs Layer Grown on GaAs Using a Transmission Electron Microscope 155
Evidence for a Dominant Midgap Trap in n-ZnSe Grown by Molecular Beam Epitaxy 154
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures 154
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates. 152
Silicon Clustering in Si-GaAs d-doped Layers and Superlattices 151
Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping 151
Transmission Electron Microscopy Studies of the Microstructure of Si Layers Grown on GaAs(001) under an Excess As or Al Flux 150
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs(1-x)N(x) 149
Ohmic Versus Rectifying Contacts through Interfacial Dipoles: Al/InxGa1-xAs 147
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 147
Stopping and Resuming at Will the Growth of GaAs Nanowires 147
High Resolution Transmission Electron Microscopy to Study Very Thin Crystalline Layers Buried at an Amorphous-crystalline Interface 145
Heterojunction band offset engineering 145
Cathodoluminescence Study of the Yo Emission from ZnSe Films 143
ZnSe/CdTe/ZnSe Heterostructures 143
Manganese-induced Growth of GaAs Nanowires 143
Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001) 143
Thermal Evolution of Small N-D Complexes in Deutereted Diluted Nitrides Revealed by High-Resolution In Situ X-ray Diffraction 140
Elettra-Sincrotrone Trieste: present and future 140
Reflectionless Tunneling in Planar Nb/GaAs Hybrid Junctions 139
Influence of N-cluster states on the gyromagnetic factor of electrons in GaAs(1-x)N(x) 139
Resonant Transport in Nb/GaAs/AlGaAs Heterostructures: Realization of the de Gennes-Saint-James Model 139
Resonant Second Harmonic Generation in ZnSe Bulk Microcavity 138
Lateral Inhomogeneities in Engineered Schottky Barriers 138
In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors 138
Metal/III-V Diodes Engineered by means of Si Interlayers: Interface Reactions versus Local Interface Dipoles 134
InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: a comparison 129
Selected growth of ZnSe and ZnCdSe Nanowires and Nanosaws by Molecular Beam Epitaxy 129
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs anowires 122
Spatially Resolved Near-field Luminescence Spectroscopy of II-VI Quantum Wells: The Role of Localized Excitons 118
Tunable Schottky Barrier Contacts to In1-xGaxAs 117
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs 117
Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) 115
Photoluminescence of GaAs Nanowires by Mn-catalysed Molecular Beam Epitaxy 114
Zn0.85Cd0.15Se Active Layers on Graded-composition InxGa1-xAs Buffer Layer 112
Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 µm 112
Site of Mn delta-doped GaAs: x-ray absorption spectroscopy 110
In-N and N-N correlation in InGaAsN/GaAs quasi-lattice-matched quantum wells: a cross-sectional scanning tunneling microscopy study 109
Intra-atomic Mid-IR (3.7 microns) luminescence in ZnSe:Fe grown by molecular beam epitaxy 104
Local Interface Composition and Native Stacking Fault Densityin ZnSe/GaAs(001) Heterostructures 98
High Resolution X-ray Diffraction In-situ Studies of Very Small Complexes: the Case of Hydrogenate Dilute Nitrides 88
High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spettroscopy 86
The Elettra 2.0 Beamlines 67
Microscopic Mechanisms of Self-compensation in Si d-doped GaAs 66
Totale 11.818
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Categoria #
all - tutte 33.747
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 33.747
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021286 0 0 0 0 0 0 0 0 0 129 45 112
2021/2022718 40 53 21 94 4 63 32 33 87 102 69 120
2022/20231.159 104 96 85 139 216 200 3 74 125 4 89 24
2023/2024535 62 38 14 66 63 21 66 117 0 10 38 40
2024/20251.331 7 25 57 158 151 242 62 101 100 124 146 158
2025/20263.036 297 282 289 241 339 371 452 97 320 348 0 0
Totale 11.818