ArTS Archivio della ricerca di Trieste

FRANCIOSI, ALFONSO
 Distribuzione geografica
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Continente #
NA - Nord America 4.932
EU - Europa 1.809
AS - Asia 530
AF - Africa 16
Continente sconosciuto - Info sul continente non disponibili 12
SA - Sud America 3
OC - Oceania 1
Totale 7.303
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Nazione #
US - Stati Uniti d'America 4.927
UA - Ucraina 483
SE - Svezia 343
IT - Italia 241
CN - Cina 237
TR - Turchia 157
FI - Finlandia 147
GB - Regno Unito 123
DE - Germania 111
HK - Hong Kong 96
IE - Irlanda 75
BG - Bulgaria 73
FR - Francia 68
CZ - Repubblica Ceca 43
CH - Svizzera 40
BE - Belgio 25
SN - Senegal 15
IN - India 13
PK - Pakistan 12
EU - Europa 11
PL - Polonia 8
CA - Canada 5
ES - Italia 5
JP - Giappone 4
NL - Olanda 4
RO - Romania 4
RU - Federazione Russa 4
BR - Brasile 3
HR - Croazia 3
SI - Slovenia 2
VN - Vietnam 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AU - Australia 1
BD - Bangladesh 1
DZ - Algeria 1
GR - Grecia 1
HU - Ungheria 1
IL - Israele 1
JO - Giordania 1
KH - Cambogia 1
KR - Corea 1
LK - Sri Lanka 1
LT - Lituania 1
LU - Lussemburgo 1
MC - Monaco 1
RS - Serbia 1
SG - Singapore 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
Totale 7.303
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Città #
Fairfield 712
Woodbridge 560
Ann Arbor 467
Houston 461
Jacksonville 418
Ashburn 350
Chandler 344
Wilmington 342
Seattle 303
Cambridge 217
Izmir 154
Princeton 146
Beijing 96
Hong Kong 96
Dublin 75
Bremen 73
Sofia 73
Boardman 60
Prague 42
Milan 40
Bern 39
San Diego 35
Trieste 32
Verona 32
Des Moines 30
Dearborn 26
Brussels 24
Buffalo 18
Chicago 16
Dakar 15
Düsseldorf 13
Fremont 11
Hefei 11
Edinburgh 10
Norwalk 10
Pune 10
Mestre 9
Islamabad 8
Kraków 8
Kunming 8
Helsinki 7
Los Angeles 7
Phoenix 7
Auburn Hills 5
Jinan 5
Nanjing 5
Salerno 5
Shenyang 5
Atlanta 4
Fuzhou 4
Sacile 4
Tokyo 4
Washington 4
Budrio 3
Guangzhou 3
Huskvarna 3
New York 3
Redwood City 3
Würzburg 3
Zhengzhou 3
Boston 2
Changsha 2
Chongqing 2
Clearwater 2
Cormeilles-en-Parisis 2
Falls Church 2
Hanoi 2
Kocaeli 2
Lanzhou 2
London 2
Madrid 2
Mountain View 2
Paris 2
Philadelphia 2
Pittsburgh 2
Pordenone 2
Quzhou 2
São Paulo 2
Taiyuan 2
Teolo 2
Tianjin 2
Timisoara 2
Tolmezzo 2
Toronto 2
Amman 1
Athens 1
Bangkok 1
Barcelona 1
Belgrade 1
Bratislava 1
Brisbane 1
Bristol 1
Brno 1
Budapest 1
Cavacurta 1
Charlotte 1
Chennai 1
Colombo 1
Columbus 1
Cranbrook 1
Totale 5.545
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Nome #
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 180
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence 176
null 161
Contactless Monitoring of the Diameter-dependent Conductivity of GaAs Nanowires 156
Nitrogen-induced hindering of In incorporation in InGaAsN 152
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 142
Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy 141
Photoreflectance and Reflectance Investigation of Deuterium-irradiated GaAsN 140
Photoemission Microscopy Investigation of Buried p-n GaAs Homojunctions and Al/n-GaAs Schottky Barriers 135
Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy 129
Controlling Interface Reactivity and Schottky Barrier Height in Au/ZnSe(001) Junctions 127
Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging 126
Assessing the Projects on the ESFRI Roadmap 124
Cross-sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures 122
Structure and Growth Mechanism of ZnSe Nanowires 118
Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping 118
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy 116
GaAs Nanowires by Mn-catalysed Molecular Beam Epitaxy 116
Local interface composition and band discontinuities in heterovalent heterostructures 116
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures 116
Formation and Dissolution of D-N Complexes in Dilute Nitrides 115
Andreev Reflection in Engineered Al/Si/InxGa1-xAs(001) Junctions 114
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces 113
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires 112
Cathodoluminescence Spectroscopy of Deep Defect Levels at the ZnSe/GaAs Interface with Composition-control Interface Layer 111
Catalyst incorporation in ZnSe nanowires 111
Photocapacitance Study of Bulk Deep Levels in ZnSe Grown by Molecular Beam Epitaxy 111
Controlling the Native Stacking Fault Density in II-VI/III-V Heterostructures 109
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates. 109
Stopping and Resuming at Will the Growth of GaAs Nanowires 108
Excitonic Properties and Band Alignment in Lattice-matched ZnCdSe/ZnMgSe Multiple Quantum Well Structures 106
Silicon Clustering in Si-GaAs d-doped Layers and Superlattices 104
Heterojunction band offset engineering 103
CdTe Epitaxial Layers in ZnSe-based Heterostructures 102
Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001) 102
Evidence for a Dominant Midgap Trap in n-ZnSe Grown by Molecular Beam Epitaxy 101
Cavity Size and Temperature Dependence of Stimulated Emission in Single Zn1-xCdxSe/ZnSe Quantum-well Lasers 101
Reflectionless Tunneling in Planar Nb/GaAs Hybrid Junctions 99
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures 99
Band Discontinuities in ZnMgSe/ZnCdSe(001) Lattice-matched Heterostructures 98
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 96
Manganese-induced Growth of GaAs Nanowires 96
Resonant Transport in Nb/GaAs/AlGaAs Heterostructures: Realization of the de Gennes-Saint-James Model 95
High Resolution Transmission Electron Microscopy to Study Very Thin Crystalline Layers Buried at an Amorphous-crystalline Interface 94
Ohmic Versus Rectifying Contacts through Interfacial Dipoles: Al/InxGa1-xAs 94
Lateral Inhomogeneities in Engineered Schottky Barriers 93
Resonant Second Harmonic Generation in ZnSe Bulk Microcavity 91
Transmission Electron Microscopy Studies of the Microstructure of Si Layers Grown on GaAs(001) under an Excess As or Al Flux 91
In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors 91
1.26 µm Intersubband Transitions in In0.3Ga0.7As/AlAs Quantum Wells 91
Metal/III-V Diodes Engineered by means of Si Interlayers: Interface Reactions versus Local Interface Dipoles 90
InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: a comparison 90
ZnSe/CdTe/ZnSe Heterostructures 88
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs(1-x)N(x) 88
Thermal Evolution of Small N-D Complexes in Deutereted Diluted Nitrides Revealed by High-Resolution In Situ X-ray Diffraction 86
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs anowires 80
Influence of N-cluster states on the gyromagnetic factor of electrons in GaAs(1-x)N(x) 77
Selected growth of ZnSe and ZnCdSe Nanowires and Nanosaws by Molecular Beam Epitaxy 76
Cathodoluminescence from InGaAs Layer Grown on GaAs Using a Transmission Electron Microscope 75
Spatially Resolved Near-field Luminescence Spectroscopy of II-VI Quantum Wells: The Role of Localized Excitons 71
Cathodoluminescence Study of the Yo Emission from ZnSe Films 69
Intra-atomic Mid-IR (3.7 microns) luminescence in ZnSe:Fe grown by molecular beam epitaxy 69
Tunable Schottky Barrier Contacts to In1-xGaxAs 68
In-N and N-N correlation in InGaAsN/GaAs quasi-lattice-matched quantum wells: a cross-sectional scanning tunneling microscopy study 67
Photoluminescence of GaAs Nanowires by Mn-catalysed Molecular Beam Epitaxy 63
Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) 61
Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 µm 61
Zn0.85Cd0.15Se Active Layers on Graded-composition InxGa1-xAs Buffer Layer 58
Site of Mn delta-doped GaAs: x-ray absorption spectroscopy 58
High Resolution X-ray Diffraction In-situ Studies of Very Small Complexes: the Case of Hydrogenate Dilute Nitrides 51
Local Interface Composition and Native Stacking Fault Densityin ZnSe/GaAs(001) Heterostructures 50
High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spettroscopy 44
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs 22
Microscopic Mechanisms of Self-compensation in Si d-doped GaAs 21
Elettra-Sincrotrone Trieste: present and future 18
The Elettra 2.0 Beamlines 1
Totale 7.373
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Categoria #
all - tutte 18.179
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.179
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019671 0 0 0 0 0 0 0 0 0 0 459 212
2019/20201.731 104 83 93 353 111 229 166 200 147 93 119 33
2020/20211.065 117 52 114 121 56 105 76 103 35 129 45 112
2021/2022718 40 53 21 94 4 63 32 33 87 102 69 120
2022/20231.159 104 96 85 139 216 200 3 74 125 4 89 24
2023/2024457 62 38 14 66 63 21 66 117 0 10 0 0
Totale 7.373