ArTS Archivio della ricerca di Trieste

FRANCIOSI, ALFONSO
 Distribuzione geografica
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Continente #
NA - Nord America 6.694
AS - Asia 2.850
EU - Europa 2.405
SA - Sud America 272
Continente sconosciuto - Info sul continente non disponibili 85
AF - Africa 72
OC - Oceania 2
Totale 12.380
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Nazione #
US - Stati Uniti d'America 6.617
SG - Singapore 985
CN - Cina 828
UA - Ucraina 486
SE - Svezia 348
IT - Italia 327
HK - Hong Kong 291
BR - Brasile 217
VN - Vietnam 205
KR - Corea 194
FR - Francia 189
GB - Regno Unito 172
TR - Turchia 169
FI - Finlandia 167
DE - Germania 157
PL - Polonia 103
RU - Federazione Russa 92
IE - Irlanda 76
BG - Bulgaria 73
CZ - Repubblica Ceca 46
IN - India 46
CH - Svizzera 43
CA - Canada 41
NL - Olanda 41
BE - Belgio 30
MA - Marocco 27
AR - Argentina 26
BD - Bangladesh 20
MX - Messico 19
SN - Senegal 17
JP - Giappone 15
PK - Pakistan 15
IQ - Iraq 13
ES - Italia 12
EU - Europa 11
ZA - Sudafrica 11
EC - Ecuador 8
CO - Colombia 7
JO - Giordania 7
LT - Lituania 7
AT - Austria 6
PH - Filippine 6
VE - Venezuela 6
CR - Costa Rica 5
HN - Honduras 5
TH - Thailandia 5
AE - Emirati Arabi Uniti 4
CI - Costa d'Avorio 4
HR - Croazia 4
KG - Kirghizistan 4
MY - Malesia 4
NP - Nepal 4
RO - Romania 4
SA - Arabia Saudita 4
TW - Taiwan 4
UZ - Uzbekistan 4
CL - Cile 3
DK - Danimarca 3
DZ - Algeria 3
IL - Israele 3
JM - Giamaica 3
KZ - Kazakistan 3
PT - Portogallo 3
SK - Slovacchia (Repubblica Slovacca) 3
TN - Tunisia 3
AL - Albania 2
AU - Australia 2
AZ - Azerbaigian 2
BY - Bielorussia 2
EG - Egitto 2
KH - Cambogia 2
KW - Kuwait 2
PY - Paraguay 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BW - Botswana 1
CG - Congo 1
GR - Grecia 1
HU - Ungheria 1
ID - Indonesia 1
IR - Iran 1
KE - Kenya 1
LB - Libano 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MC - Monaco 1
MM - Myanmar 1
NI - Nicaragua 1
OM - Oman 1
PR - Porto Rico 1
PS - Palestinian Territory 1
QA - Qatar 1
RS - Serbia 1
Totale 12.304
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Città #
Fairfield 712
Ashburn 575
Woodbridge 560
Singapore 542
Ann Arbor 467
Houston 466
Jacksonville 418
Chandler 344
Wilmington 342
San Jose 333
Hefei 324
Seattle 303
Hong Kong 288
Cambridge 217
Seoul 193
Beijing 180
Izmir 154
Boardman 151
Princeton 146
Columbus 131
Council Bluffs 110
Santa Clara 101
Chicago 100
Dublin 76
Bremen 73
Sofia 73
Zgierz 71
Lauterbourg 68
Ho Chi Minh City 65
Buffalo 60
The Dalles 59
Hanoi 54
Milan 53
Los Angeles 52
Trieste 47
Prague 44
Moscow 43
Bern 39
Dallas 38
New York 36
San Diego 35
Des Moines 32
Verona 32
Brussels 29
Dearborn 26
Frankfurt am Main 25
Düsseldorf 23
São Paulo 23
Casablanca 22
Helsinki 20
Dakar 17
Warsaw 17
Montreal 16
London 15
Phoenix 15
Brooklyn 14
Tianjin 13
Tokyo 13
Pune 12
Edinburgh 11
Fremont 11
Atlanta 10
Chennai 10
Norwalk 10
Orem 10
Shanghai 10
Guangzhou 9
Islamabad 9
Mestre 9
Baghdad 8
Boston 8
Kraków 8
Kunming 8
San Francisco 8
Amman 7
Johannesburg 7
Miano 7
Philadelphia 7
Rio de Janeiro 7
Washington 7
Amsterdam 6
Bắc Ninh 6
Bến Tre 6
Curitiba 6
Da Nang 6
Denver 6
Hải Dương 6
Manchester 6
Muggia 6
Munich 6
Nanjing 6
Auburn Hills 5
Belo Horizonte 5
Campinas 5
Caracas 5
Jinan 5
Mexico City 5
Ottawa 5
Pittsburgh 5
Salerno 5
Totale 8.799
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Nome #
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence 273
Contactless Monitoring of the Diameter-dependent Conductivity of GaAs Nanowires 253
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 245
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 242
Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging 223
Controlling Interface Reactivity and Schottky Barrier Height in Au/ZnSe(001) Junctions 222
Cross-sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures 220
Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy 219
Cathodoluminescence Spectroscopy of Deep Defect Levels at the ZnSe/GaAs Interface with Composition-control Interface Layer 213
Assessing the Projects on the ESFRI Roadmap 213
Nitrogen-induced hindering of In incorporation in InGaAsN 210
Band Discontinuities in ZnMgSe/ZnCdSe(001) Lattice-matched Heterostructures 205
Andreev Reflection in Engineered Al/Si/InxGa1-xAs(001) Junctions 202
Controlling the Native Stacking Fault Density in II-VI/III-V Heterostructures 201
Catalyst incorporation in ZnSe nanowires 198
Photoemission Microscopy Investigation of Buried p-n GaAs Homojunctions and Al/n-GaAs Schottky Barriers 191
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces 191
CdTe Epitaxial Layers in ZnSe-based Heterostructures 191
Local interface composition and band discontinuities in heterovalent heterostructures 191
1.26 µm Intersubband Transitions in In0.3Ga0.7As/AlAs Quantum Wells 189
Photoreflectance and Reflectance Investigation of Deuterium-irradiated GaAsN 187
Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy 186
Cavity Size and Temperature Dependence of Stimulated Emission in Single Zn1-xCdxSe/ZnSe Quantum-well Lasers 186
Structure and Growth Mechanism of ZnSe Nanowires 181
GaAs Nanowires by Mn-catalysed Molecular Beam Epitaxy 178
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures 175
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires 171
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy 168
Formation and Dissolution of D-N Complexes in Dilute Nitrides 166
Excitonic Properties and Band Alignment in Lattice-matched ZnCdSe/ZnMgSe Multiple Quantum Well Structures 165
Photocapacitance Study of Bulk Deep Levels in ZnSe Grown by Molecular Beam Epitaxy 165
Transmission Electron Microscopy Studies of the Microstructure of Si Layers Grown on GaAs(001) under an Excess As or Al Flux 163
Cathodoluminescence from InGaAs Layer Grown on GaAs Using a Transmission Electron Microscope 162
null 161
Evidence for a Dominant Midgap Trap in n-ZnSe Grown by Molecular Beam Epitaxy 159
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures 158
Silicon Clustering in Si-GaAs d-doped Layers and Superlattices 157
Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping 157
Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001) 155
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs(1-x)N(x) 154
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates. 154
Ohmic Versus Rectifying Contacts through Interfacial Dipoles: Al/InxGa1-xAs 153
High Resolution Transmission Electron Microscopy to Study Very Thin Crystalline Layers Buried at an Amorphous-crystalline Interface 152
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 152
Stopping and Resuming at Will the Growth of GaAs Nanowires 152
Manganese-induced Growth of GaAs Nanowires 151
ZnSe/CdTe/ZnSe Heterostructures 150
Heterojunction band offset engineering 150
Cathodoluminescence Study of the Yo Emission from ZnSe Films 149
Resonant Transport in Nb/GaAs/AlGaAs Heterostructures: Realization of the de Gennes-Saint-James Model 149
Thermal Evolution of Small N-D Complexes in Deutereted Diluted Nitrides Revealed by High-Resolution In Situ X-ray Diffraction 148
Elettra-Sincrotrone Trieste: present and future 147
Reflectionless Tunneling in Planar Nb/GaAs Hybrid Junctions 145
Resonant Second Harmonic Generation in ZnSe Bulk Microcavity 145
In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors 145
Influence of N-cluster states on the gyromagnetic factor of electrons in GaAs(1-x)N(x) 144
Lateral Inhomogeneities in Engineered Schottky Barriers 144
Metal/III-V Diodes Engineered by means of Si Interlayers: Interface Reactions versus Local Interface Dipoles 143
Selected growth of ZnSe and ZnCdSe Nanowires and Nanosaws by Molecular Beam Epitaxy 136
InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: a comparison 135
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs 131
Spatially Resolved Near-field Luminescence Spectroscopy of II-VI Quantum Wells: The Role of Localized Excitons 127
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs anowires 126
Tunable Schottky Barrier Contacts to In1-xGaxAs 124
Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) 122
Photoluminescence of GaAs Nanowires by Mn-catalysed Molecular Beam Epitaxy 121
In-N and N-N correlation in InGaAsN/GaAs quasi-lattice-matched quantum wells: a cross-sectional scanning tunneling microscopy study 121
Zn0.85Cd0.15Se Active Layers on Graded-composition InxGa1-xAs Buffer Layer 119
Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 µm 119
Site of Mn delta-doped GaAs: x-ray absorption spectroscopy 114
Intra-atomic Mid-IR (3.7 microns) luminescence in ZnSe:Fe grown by molecular beam epitaxy 111
Local Interface Composition and Native Stacking Fault Densityin ZnSe/GaAs(001) Heterostructures 105
High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spettroscopy 97
High Resolution X-ray Diffraction In-situ Studies of Very Small Complexes: the Case of Hydrogenate Dilute Nitrides 97
The Elettra 2.0 Beamlines 82
Microscopic Mechanisms of Self-compensation in Si d-doped GaAs 74
Totale 12.380
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Categoria #
all - tutte 37.460
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 37.460
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022625 0 0 21 94 4 63 32 33 87 102 69 120
2022/20231.159 104 96 85 139 216 200 3 74 125 4 89 24
2023/2024535 62 38 14 66 63 21 66 117 0 10 38 40
2024/20251.331 7 25 57 158 151 242 62 101 100 124 146 158
2025/20263.200 297 282 289 241 339 371 452 97 320 378 80 54
2026/2027398 77 184 137 0 0 0 0 0 0 0 0 0
Totale 12.380