ArTS Archivio della ricerca di Trieste

FRANCIOSI, ALFONSO
 Distribuzione geografica
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Continente #
NA - Nord America 5.242
EU - Europa 1.956
AS - Asia 965
SA - Sud America 22
AF - Africa 20
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 1
Totale 8.218
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Nazione #
US - Stati Uniti d'America 5.229
UA - Ucraina 484
SE - Svezia 344
IT - Italia 273
CN - Cina 269
SG - Singapore 268
HK - Hong Kong 224
TR - Turchia 160
FI - Finlandia 148
GB - Regno Unito 127
DE - Germania 115
RU - Federazione Russa 82
IE - Irlanda 76
BG - Bulgaria 73
FR - Francia 70
CZ - Repubblica Ceca 45
CH - Svizzera 40
BE - Belgio 29
BR - Brasile 20
SN - Senegal 16
IN - India 13
CA - Canada 12
PK - Pakistan 12
EU - Europa 11
NL - Olanda 9
PL - Polonia 8
ES - Italia 5
JP - Giappone 4
LT - Lituania 4
RO - Romania 4
AT - Austria 3
HR - Croazia 3
DK - Danimarca 2
DZ - Algeria 2
IL - Israele 2
JO - Giordania 2
KR - Corea 2
MA - Marocco 2
PT - Portogallo 2
SI - Slovenia 2
SK - Slovacchia (Repubblica Slovacca) 2
VN - Vietnam 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AU - Australia 1
AZ - Azerbaigian 1
BD - Bangladesh 1
EC - Ecuador 1
GR - Grecia 1
HU - Ungheria 1
JM - Giamaica 1
KH - Cambogia 1
KZ - Kazakistan 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MC - Monaco 1
PY - Paraguay 1
RS - Serbia 1
TH - Thailandia 1
Totale 8.218
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Città #
Fairfield 712
Woodbridge 560
Ann Arbor 467
Houston 461
Jacksonville 418
Ashburn 351
Chandler 344
Wilmington 342
Seattle 303
Hong Kong 224
Cambridge 217
Singapore 168
Izmir 154
Boardman 151
Princeton 146
Beijing 97
Santa Clara 83
Dublin 76
Bremen 73
Sofia 73
Columbus 68
Prague 44
Moscow 43
Trieste 43
Milan 42
Bern 39
San Diego 35
Verona 32
Des Moines 30
Brussels 28
Dearborn 26
Buffalo 18
Chicago 16
Dakar 16
Düsseldorf 13
Fremont 11
Hefei 11
Los Angeles 11
Edinburgh 10
Norwalk 10
Pune 10
Dallas 9
Mestre 9
Islamabad 8
Kraków 8
Kunming 8
Helsinki 7
Phoenix 7
Muggia 6
Auburn Hills 5
Guangzhou 5
Jinan 5
Nanjing 5
Salerno 5
Shenyang 5
Atlanta 4
Fuzhou 4
Sacile 4
Tokyo 4
Toronto 4
Washington 4
Budrio 3
Frankfurt am Main 3
Huskvarna 3
London 3
Montreal 3
New York 3
Ottawa 3
Redwood City 3
Shanghai 3
Vienna 3
Würzburg 3
Zhengzhou 3
Amman 2
Amsterdam 2
Boston 2
Bratislava 2
Changsha 2
Chongqing 2
Clearwater 2
Cormeilles-en-Parisis 2
Falls Church 2
Forest City 2
Hanoi 2
Kocaeli 2
Lanzhou 2
Madrid 2
Modena 2
Mountain View 2
Naples 2
Paris 2
Philadelphia 2
Pittsburgh 2
Plouzané 2
Pordenone 2
Quzhou 2
Rome 2
Stockholm 2
São Paulo 2
Taiyuan 2
Totale 6.182
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Nome #
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence 189
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 189
Contactless Monitoring of the Diameter-dependent Conductivity of GaAs Nanowires 171
null 161
Nitrogen-induced hindering of In incorporation in InGaAsN 161
Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy 154
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 154
Controlling Interface Reactivity and Schottky Barrier Height in Au/ZnSe(001) Junctions 153
Photoreflectance and Reflectance Investigation of Deuterium-irradiated GaAsN 147
Photoemission Microscopy Investigation of Buried p-n GaAs Homojunctions and Al/n-GaAs Schottky Barriers 147
Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging 144
Assessing the Projects on the ESFRI Roadmap 142
Cross-sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures 140
Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy 138
Andreev Reflection in Engineered Al/Si/InxGa1-xAs(001) Junctions 130
Local interface composition and band discontinuities in heterovalent heterostructures 128
Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping 128
Cathodoluminescence Spectroscopy of Deep Defect Levels at the ZnSe/GaAs Interface with Composition-control Interface Layer 127
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces 127
Structure and Growth Mechanism of ZnSe Nanowires 127
Controlling the Native Stacking Fault Density in II-VI/III-V Heterostructures 126
GaAs Nanowires by Mn-catalysed Molecular Beam Epitaxy 125
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates. 125
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy 124
Formation and Dissolution of D-N Complexes in Dilute Nitrides 124
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures 124
Catalyst incorporation in ZnSe nanowires 123
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires 122
Photocapacitance Study of Bulk Deep Levels in ZnSe Grown by Molecular Beam Epitaxy 120
CdTe Epitaxial Layers in ZnSe-based Heterostructures 119
Excitonic Properties and Band Alignment in Lattice-matched ZnCdSe/ZnMgSe Multiple Quantum Well Structures 118
Cavity Size and Temperature Dependence of Stimulated Emission in Single Zn1-xCdxSe/ZnSe Quantum-well Lasers 115
Band Discontinuities in ZnMgSe/ZnCdSe(001) Lattice-matched Heterostructures 115
Stopping and Resuming at Will the Growth of GaAs Nanowires 115
Silicon Clustering in Si-GaAs d-doped Layers and Superlattices 114
Heterojunction band offset engineering 112
High Resolution Transmission Electron Microscopy to Study Very Thin Crystalline Layers Buried at an Amorphous-crystalline Interface 110
Evidence for a Dominant Midgap Trap in n-ZnSe Grown by Molecular Beam Epitaxy 110
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures 110
Reflectionless Tunneling in Planar Nb/GaAs Hybrid Junctions 109
Transmission Electron Microscopy Studies of the Microstructure of Si Layers Grown on GaAs(001) under an Excess As or Al Flux 109
Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001) 109
1.26 µm Intersubband Transitions in In0.3Ga0.7As/AlAs Quantum Wells 108
Manganese-induced Growth of GaAs Nanowires 107
Ohmic Versus Rectifying Contacts through Interfacial Dipoles: Al/InxGa1-xAs 105
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 104
In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors 104
Resonant Transport in Nb/GaAs/AlGaAs Heterostructures: Realization of the de Gennes-Saint-James Model 104
Lateral Inhomogeneities in Engineered Schottky Barriers 102
Resonant Second Harmonic Generation in ZnSe Bulk Microcavity 100
InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: a comparison 99
Metal/III-V Diodes Engineered by means of Si Interlayers: Interface Reactions versus Local Interface Dipoles 98
ZnSe/CdTe/ZnSe Heterostructures 98
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs(1-x)N(x) 97
Thermal Evolution of Small N-D Complexes in Deutereted Diluted Nitrides Revealed by High-Resolution In Situ X-ray Diffraction 95
Cathodoluminescence from InGaAs Layer Grown on GaAs Using a Transmission Electron Microscope 91
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs anowires 88
Influence of N-cluster states on the gyromagnetic factor of electrons in GaAs(1-x)N(x) 87
Cathodoluminescence Study of the Yo Emission from ZnSe Films 85
Selected growth of ZnSe and ZnCdSe Nanowires and Nanosaws by Molecular Beam Epitaxy 84
Spatially Resolved Near-field Luminescence Spectroscopy of II-VI Quantum Wells: The Role of Localized Excitons 79
Tunable Schottky Barrier Contacts to In1-xGaxAs 78
Intra-atomic Mid-IR (3.7 microns) luminescence in ZnSe:Fe grown by molecular beam epitaxy 78
In-N and N-N correlation in InGaAsN/GaAs quasi-lattice-matched quantum wells: a cross-sectional scanning tunneling microscopy study 74
Elettra-Sincrotrone Trieste: present and future 74
Photoluminescence of GaAs Nanowires by Mn-catalysed Molecular Beam Epitaxy 73
Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 µm 71
Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) 70
Zn0.85Cd0.15Se Active Layers on Graded-composition InxGa1-xAs Buffer Layer 69
Site of Mn delta-doped GaAs: x-ray absorption spectroscopy 67
Local Interface Composition and Native Stacking Fault Densityin ZnSe/GaAs(001) Heterostructures 62
High Resolution X-ray Diffraction In-situ Studies of Very Small Complexes: the Case of Hydrogenate Dilute Nitrides 60
High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spettroscopy 52
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs 43
Microscopic Mechanisms of Self-compensation in Si d-doped GaAs 30
The Elettra 2.0 Beamlines 20
Totale 8.291
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Categoria #
all - tutte 24.378
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.378
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020392 0 0 0 0 0 0 0 0 147 93 119 33
2020/20211.065 117 52 114 121 56 105 76 103 35 129 45 112
2021/2022718 40 53 21 94 4 63 32 33 87 102 69 120
2022/20231.159 104 96 85 139 216 200 3 74 125 4 89 24
2023/2024535 62 38 14 66 63 21 66 117 0 10 38 40
2024/2025840 7 25 57 158 151 242 62 101 37 0 0 0
Totale 8.291